參數(shù)資料
型號(hào)： NTD78N03
廠商： ON SEMICONDUCTOR
元件分類： JFETs
英文描述： Power MOSFET 25 V, 78 A(25V, 78A, 功率MOSFET)
中文描述： 11.4 A, 25 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： CASE 369AA-01, DPAK-3
文件頁(yè)數(shù)： 1/7頁(yè)
文件大?。?/td> 81K
代理商： NTD78N03
Semiconductor Components Industries, LLC, 2006
September, 2006 Rev. 6
1
Publication Order Number:
NTD78N03/D
NTD78N03
Power MOSFET
25 V, 78 A, Single NChannel, DPAK
Features
Low R
DS(on)
Optimized Gate Charge
PbFree Packages are Available
Applications
Desktop VCORE
DCDC Converters
Low Side Switch
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Parameter
Symbol
Value
Unit
DraintoSource Voltage
V
DSS
V
GS
I
D
25
V
GatetoSource Voltage
20
V
Continuous Drain
Current (Note 1)
Steady
State
T
C
= 25
°
C
T
C
= 85
°
C
T
C
= 25
°
C
14.8
A
11.5
Power Dissipation
(Note 1)
P
D
2.3
W
Continuous Drain
Current (Note 2)
T
C
= 25
°
C
T
C
= 85
°
C
T
C
= 25
°
C
I
D
11.4
A
8.8
Power Dissipation
(Note 2)
P
D
1.4
W
Continuous Drain
Current (R
JC
)
T
C
= 25
°
C
T
C
= 85
°
C
T
C
= 25
°
C
I
D
78
A
56
Power Dissipation
(R
JC
)
Pulsed Drain Current
P
D
64
W
t
p
= 10 s
T
A
= 25
°
C
I
DM
210
A
Current Limited by Package
I
DmaxPkg
dV/dt
45
A
Drain to Source dV/dt
8.0
V/ns
°
C
A
Operating Junction and Storage Temperature
T
J
, T
stg
I
S
E
AS
55 to 175
Source Current (Body Diode)
78
Single Pulse DraintoSource Avalanche
Energy (V
= 24 V, V
= 10 V,
L = 5.0 mH, I
L
(pk) = 17 A, R
G
= 25 )
Lead Temperature for Soldering Purposes
(1/8
″
from case for 10 seconds)
THERMAL RESISTANCE
722.5
mJ
T
L
260
°
C
JunctiontoCase (Drain)
R
JC
R
JA
R
JA
1.95
°
C/W
JunctiontoAmbient Steady State (Note 1)
65
JunctiontoAmbient Steady State (Note 2)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surfacemounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in
sq [1 oz] including traces).
2. Surfacemounted on FR4 board using the minimum recommended pad size.
110
CASE 369AA
DPAK
(Bend Lead)
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENTS
CASE 369D
DPAK
(Straight Lead)
STYLE 2
25 V
4.6 @ 10 V
R
DS(on)
TYP
78 A
I
D
MAX
V
(BR)DSS
6.5 @ 4.5 V
http://onsemi.com
1 2
3
4
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
123
4
CASE 369AD
IPAK
(Straight Lead)
123
4
NChannel
D
S
G
Y
7
N
1
Gate
2
Drain3
Source
4
Drain
4
Drain
2
Drain
1
Gate
3
Source
4
Drain
2
Drain
1
Gate
3
Source
Y
7
N
Y
7
N
Y
WW
78N03 = Device Code
G
= PbFree Package
= Year
= Work Week
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NTD78N03-001 功能描述:MOSFET 25V 78A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTD78N03-035 功能描述:MOSFET 25V 78A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTD78N031 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 25 V, 78 A, Single Na??Channel, DPAK
NTD78N031G 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 25 V, 78 A, Single Na??Channel, DPAK
NTD78N03-1G 功能描述:MOSFET 25V 78A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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