參數(shù)資料
型號(hào)： NTD60N03
廠商： ON SEMICONDUCTOR
元件分類(lèi)： JFETs
英文描述： Power MOSFET 60Amps, 28Volts N-Channel DPAK(60A, 28V，N通道，DPAK封裝的功率MOSFET)
中文描述： 60 A, 28 V, 0.0075 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： CASE 369AA-01, DPAK-3
文件頁(yè)數(shù)： 1/8頁(yè)
文件大小： 83K
代理商： NTD60N03
Semiconductor Components Industries, LLC, 2003
October, 2003 Rev. 6
1
Publication Order Number:
NTD60N03/D
NTD60N03
Power MOSFET
60 Amps, 28 Volts
NChannel DPAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Typical Applications
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage
GatetoSource Voltage Continuous
Drain Current Continuous @ T
= 25
°
C
Drain Current
Single Pulse (t
p
= 10 s)
Total Power Dissipation @ T
C
= 25
°
C
Operating and Storage
Temperature Range
V
DSS
V
GS
I
D
I
DM
P
D
T
J
, T
stg
28
±
20
60*
120
75
55 to
150
733
Vdc
Vdc
Adc
Watts
°
C
Single Pulse DraintoSource Avalanche
Energy Starting T
J
= 25
°
C
(V
DD
= 28 Vdc, V
GS
= 10 Vdc,
I
L
= 17 Apk, L = 5.0 mH, R
G
= 25 )
Thermal Resistance
JunctiontoCase
JunctiontoAmbient (Note 1)
JunctiontoAmbient (Note 2)
E
AS
mJ
R
JC
R
JA
R
JA
T
L
1.65
67
120
260
°
C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8
″
from case for 10 seconds
1. When surface mounted to an FR4 board using 1
″
pad size,
(Cu Area 1.127 in
2
).
2. When surface mounted to an FR4 board using the minimum recommended
pad size, (Cu Area 0.412 in
2
).
*Chip current capability limited by package.
°
C
Device
Package
Shipping
ORDERING INFORMATION
NTD60N03
DPAK
75 Units/Rail
NTD60N03T4
DPAK
2500 Tape & Reel
NTD60N031
DPAK
Straight Lead
75 Units/Rail
http://onsemi.com
NChannel
D
S
G
1
Gate
3
Source
2
Drain
4
Drain
DPAK
CASE 369AA
Style 2
MARKING DIAGRAMS
T4228
Y
WW
Device Code
= Year
= Work Week
1 2
3
4
1
Gate
3
Source
2
Drain
4
Drain
DPAK
CASE 369D
Style 2
123
4
28 V
6.1 m
R
DS(on)
TYP
60 A
I
D
MAX
V
(BR)DSS
Y
T
4
Y
T
4
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
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相關(guān)代理商/技術(shù)參數(shù)
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NTD60N03-001 功能描述:MOSFET N-CH 28V 60A IPAK RoHS:否 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門(mén) 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類(lèi)型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
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