參數(shù)資料
型號： NTD65N03R
廠商： ON SEMICONDUCTOR
元件分類： JFETs
英文描述： Power MOSFET 25 V, 65 A(25V, 65A, 功率MOFSFET)
中文描述： 32 A, 25 V, 0.0146 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： CASE 369AA-01, DPAK-3
文件頁數(shù)： 1/8頁
文件大?。?/td> 73K
代理商： NTD65N03R
Semiconductor Components Industries, LLC, 2006
July, 2006 Rev. 3
1
Publication Order Number:
NTD65N03R/D
NTD65N03R
Power MOSFET
25 V, 65 A, Single NChannel, DPAK
Features
Low R
DS(on)
Ultra Low Gate Charge
Low Reverse Recovery Charge
PbFree Packages are Available
Applications
Desktop CPU Power
DCDC Converters
High and Low Side Switch
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Parameter
Symbol
Value
Unit
DraintoSource Voltage
V
DSS
V
GS
I
D
25
V
GatetoSource Voltage
20
V
Continuous Drain
Current (R
JC
) Limited
by Die
Steady
State
T
C
= 25
°
C
65
A
T
C
= 85
°
C
45
Continuous Drain
Current (R
JC
) Limited
by Wire
T
C
= 25
°
C
I
D
32
A
Power Dissipation
(R
JC
)
Continuous Drain
Current (Note 1)
T
C
= 25
°
C
P
D
50
W
Steady
State
T
A
= 25
°
C
T
A
= 85
°
C
T
A
= 25
°
C
I
D
11.4
A
8.9
Power Dissipation
(Note 1)
P
D
1.88
W
Continuous Drain
Current (Note 2)
Steady
State
T
A
= 25
°
C
T
A
= 85
°
C
T
A
= 25
°
C
I
D
9.5
A
7.4
Power Dissipation
(Note 2)
P
D
1.3
W
Pulsed Drain Current
t
p
= 10 s
I
DM
130
A
°
C
Operating Junction and Storage
Temperature
T
J
, T
stg
55 to
175
DraintoSource (dv/dt)
dv/dt
2.0
V/ns
Source Current (Body Diode)
I
S
2.1
A
Single Pulse DraintoSource Avalanche
Energy (V
= 24 V, V
GS
= 10 V, I
L
= 12 A,
L = 1.0 mH, R
G
= 25 )
Lead Temperature for Soldering Purposes
(1/8
″
from case for 10 s)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surfacemounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
2. Surfacemounted on FR4 board using the minimum recommended pad size
(Cu area = 0.15 in sq) [1 oz] including traces.
E
AS
71.7
mJ
T
L
260
°
C
CASE 369AA
DPAK
(Bend Lead)
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENTS
Y
WW
65N03 = Device Code
G
= PbFree Package
= Year
= Work Week
3
Source
2
Drain
4
Drain
1
Gate
3
Source
2
Drain
4
Drain
CASE 369D
DPAK
(Straight Lead)
STYLE 2
1
Gate
Y
6
N
Y
6
N
25 V
6.5 m @ 10 V
R
DS(on)
TYP
65 A
I
D
MAX
V
(BR)DSS
http://onsemi.com
9.7 m @ 4.5 V
1 2
3
4
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
D
S
G
NChannel
123
4
CASE 369AC
3 IPAK
(Straight Lead)
123
4
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NTD65N03R-001 功能描述:MOSFET 25V 65A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTD65N03R-035 功能描述:MOSFET 25V 65A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTD65N03R-1 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 25 V, 65 A, Single N-Channel, DPAK
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NTD65N03R-35 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 25 V, 65 A, Single N-Channel, DPAK
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