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參數(shù)資料
| 型號： | NTB27N06L |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | Power MOSFET 27Amps, 60 Volts,Logic Level N-Channel TO-220(27A, 60 V,邏輯電平，N通道，TO-220封裝的功率MOSFET) |
| 中文描述： | 27 A, 60 V, 0.048 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 418B-03, D2PAK-3 |
| 文件頁數(shù)： | 1/12頁 |
| 文件大小： | 82K |
| 代理商： | NTB27N06L |
Semiconductor Components Industries, LLC, 2002
March, 2002 – Rev. 1
1
Publication Order Number:
NTP27N06L/D
NTP27N06L, NTB27N06L
Power MOSFET
27 Amps, 60 Volts, Logic Level
N–Channel TO–220 and D2PAK
Designed for low voltage, high speed switching applications in
power supplies, converters, power motor controls and bridge circuits.
Typical Applications
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
MAXIMUM RATINGS
(TC = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
VDSS
VDGR
60
Vdc
Drain–to–Gate Voltage (RGS = 10 M
)
Gate–to–Source Voltage
– Continuous
– Non–Repetitive (tp
60
Vdc
10 ms)
VGS
VGS
15
20
Vdc
Drain Current
– Continuous @ TA = 25
°
C
– Continuous @ TA 100
°
C
– Single Pulse (tp
Total Power Dissipation @ TA = 25
°
C
Derate above 25
°
C
10
μ
s)
ID
ID
IDM
PD
27
15
80
Adc
Apk
88.2
0.59
W
W/
°
C
Operating and Storage Temperature Range
TJ, Tstg
–55 to
+175
°
C
Single Pulse Drain–to–Source Avalanche
Energy – Starting TJ = 25
°
C
(VDD = 50 Vdc, VGS = 5.0 Vdc,
L = 0.3 mH, IL(pk) = 25 A,VDS = 60 Vdc)
Thermal Resistance – Junction–to–Case
EAS
94
mJ
R
θ
JC
TL
1.7
°
C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8
″
from case for 10 seconds
260
°
C
27 AMPERES
60 VOLTS
RDS(on) = 48 m
Device
Package
Shipping
ORDERING INFORMATION
NTP27N06L
TO–220AB
50 Units/Rail
TO–220AB
CASE 221A
STYLE 5
12
3
4
http://onsemi.com
N–Channel
D
S
G
MARKING DIAGRAMS
& PIN ASSIGNMENTS
NTx27N06L = Device Code
x
= B or P
LL
= Location Code
Y
= Year
WW
= Work Week
NTx27N06L
LLYWW
1
Gate
3
Source
4
Drain
2
Drain
NTx27N06L
LLYWW
1
Gate
3
Source
4
Drain
2
Drain
1
2
3
D2PAK
CASE 418B
STYLE 2
4
NTB27N06L
D2PAK
50 Units/Rail
NTB27N06LT4
D2PAK
800/Tape & Reel
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| NTP27N06L | Power MOSFET 27Amps, 60 Volts,Logic Level N-Channel TO-220(27A, 60 V,邏輯電平，N通道，TO-220封裝的功率MOSFET) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTB27N06LT4 | 功能描述:MOSFET N-CH 60V 27A D2PAK-3 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| NTB27N06T4 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 27 Amps, 60 Volts N?Channel TO?220 and D2PAK |
| NTB30N06 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ON Semiconductor 功能描述:Power MOSFET 30Amps, 60 Volts, N-Channel TO-220 |
| NTB30N06G | 功能描述:MOSFET NFET 60V 30A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTB30N06L | 功能描述:MOSFET 60V 30A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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