參數(shù)資料
型號： NTB27N06L
廠商： ON SEMICONDUCTOR
元件分類： JFETs
英文描述： Power MOSFET 27Amps, 60 Volts,Logic Level N-Channel TO-220(27A, 60 V,邏輯電平，N通道，TO-220封裝的功率MOSFET)
中文描述： 27 A, 60 V, 0.048 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： CASE 418B-03, D2PAK-3
文件頁數(shù)： 2/12頁
文件大小： 82K
代理商： NTB27N06L
NTP27N06L, NTB27N06L
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(Note 1)
(VGS = 0 Vdc, ID = 250
μ
Adc)
Temperature Coefficient (Positive)
V(BR)DSS
60
–
71
68
–
–
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ =150
°
C)
Gate–Body Leakage Current (VGS =
±
15
Vdc, VDS = 0 Vdc)
IDSS
–
–
–
–
1.0
10
μ
Adc
IGSS
–
–
±
100
nAdc
ON CHARACTERISTICS
(Note 1)
Gate Threshold Voltage
(Note 1)
(VDS = VGS, ID = 250
μ
Adc)
Threshold Temperature Coefficient (Negative)
VGS(th)
1.0
–
1.6
4.6
2.0
–
Vdc
mV/
°
C
Static Drain–to–Source On–Resistance
(Note 1)
(VGS = 5.0 Vdc, ID = 13.5 Adc)
RDS(on)
–
37
48
m
Static Drain–to–Source On–Resistance
(Note 1)
(VGS = 5.0 Vdc, ID = 27 Adc)
(VGS = 5.0 Vdc, ID = 13.5 Adc, TJ = 150
°
C)
VDS(on)
–
–
0.91
0.95
1.56
–
Vdc
Forward Transconductance
(Note 1) (VDS = 4.0 Vdc, ID = 10 Adc)
gFS
–
19.4
–
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vd
f = 1.0 MHz)
V
0 Vd
Ciss
Coss
–
707
990
pF
Output Capacitance
–
227
320
Transfer Capacitance
Crss
–
74
105
SWITCHING CHARACTERISTICS
(Note 2)
Turn–On Delay Time
td(on)
tr
td(off)
tf
QT
Q1
Q2
–
10.8
22
ns
Rise Time
(VDD = 30 Vdc, ID = 27 Adc,
(VDD 30 Vdc, ID 27 Adc,
VGS = 5.0 Vdc, RG = 9.1
)
(Note 1)
–
115
230
Turn–Off Delay Time
–
21
40
Fall Time
–
65
130
Gate Charge
(VDS = 48 Vd
VGS = 5.0 Vdc)
(Note 1)
I
27 Ad
–
15.2
32
nC
–
4.7
–
–
7.8
–
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 27 Adc, VGS = 0 Vdc)
(Note 1)
(IS = 27 Adc, VGS = 0 Vdc, TJ = 150
°
C)
VSD
–
–
0.91
0.86
1.25
–
Vdc
Reverse Recovery Time
(IS = 27 Adc, VGS = 0 Vdc,
dlS/dt = 100 A/
μ
s)
(Note 1)
trr
ta
tb
–
42
–
ns
–
27
–
–
15
–
Reverse Recovery Stored Charge
1. Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
2. Switching characteristics are independent of operating junction temperature.
QRR
–
0.056
–
μ
C
相關(guān)PDF資料
PDF描述
NTP27N06L Power MOSFET 27Amps, 60 Volts,Logic Level N-Channel TO-220(27A, 60 V,邏輯電平，N通道，TO-220封裝的功率MOSFET)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NTB27N06LT4 功能描述:MOSFET N-CH 60V 27A D2PAK-3 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
NTB27N06T4 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 27 Amps, 60 Volts N?Channel TO?220 and D2PAK
NTB30N06 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ON Semiconductor 功能描述:Power MOSFET 30Amps, 60 Volts, N-Channel TO-220
NTB30N06G 功能描述:MOSFET NFET 60V 30A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTB30N06L 功能描述:MOSFET 60V 30A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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