參數(shù)資料
型號: NSAM266SA
廠商: NATIONAL SEMICONDUCTOR CORP
元件分類: 數(shù)字信號處理
英文描述: 4 Mbit Uniform Sector, Serial Flash Memory
中文描述: 8-BIT, MIXED DSP
文件頁數(shù): 16/52頁
文件大?。?/td> 571K
代理商: NSAM266SA
1.0 Hardware
(Continued)
INPUT SIGNALS
Symbol
Figure
Description
Reference Conditions
Min (ns)
t
CDIh
1-15
CDIN Hold
After R.E. CTTL
0.0
t
CDIs
1-15
CDIN Setup
Before R.E. CTTL
11.0
t
DIh
1-17
Data in Hold (D0:7)
After R.E. CTTL T1, T3 or TI
0.0
t
DIs
1-17
Data in Setup (D0:7)
Before R.E. CTTL T1, T3 or TI
15.0
t
MMDINh
1-20
Master MICROWIRE Data In Hold
After R.E. CTTL
0.0
t
MMDINs
1-20
Master MICROWIRE Data In Setup
Before R.E. CTTL
11.0
t
MWCKh
1-18
MICROWIRE Clock High (Slave)
At 2.0V (Both Edges)
100.0
t
MWCKI
1-18
MICROWIRE Clock Low (Slave)
At 0.8V (Both Edges)
100.0
t
MWCKp
1-18
MICROWIRE Clock Period (Slave) (Note A)
R.E. MWCLK to next R.E. MWCLK
2.5
m
s
t
MWCLKh
1-18
MWCLK Hold
After MWCS becomes Inactive
50.0
t
MWCLKs
1-18
MWCLK Setup
Before MWCS becomes Active
100.0
t
MWCSh
1-18
MWCS Hold
After F.E. MWCLK
50.0
t
MWCSs
1-18
MWCS Setup
Before R.E. MWCLK
100.0
t
MWDIh
1-18
MWDIN Hold
After R.E. MWCLK
50.0
t
MWDIs
1-18
MWDIN Setup
Before R.E. MWCLK
100.0
t
PWR
1-24
Power Stable to RESET R.E. (Note B)
After V
CC
reaches 4.5V
30.0 ms
t
RSTw
1-23
RESET Pulse Width
At 0.8V (Both Edges)
10.0 ms
t
Xh
1-22
CLKIN High
At 2.0V (Both Edges)
t
X1p
/2
b
5
t
XI
1-22
CLKIN Low
At 0.8V (Both Edges)
t
X1p
/2
b
5
t
Xp
1-22
CLKIN Clock Period
R.E. CLKIN to next R.E. CLKIN
24.4
Note A:
Guaranteed by design, but not fully tested in power-down mode.
Note B:
Guaranteed by design, but not fully tested.
http://www.national.com
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