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參數(shù)資料
| 型號(hào)： | NE962R575 |
| 廠商： | NEC Corp. |
| 英文描述： | 0.5 W X, Ku-BAND POWER GaAs MES FET |
| 中文描述： | 0.5蠟質(zhì)，Ku波段功率GaAs場(chǎng)效應(yīng)晶體管 |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 62K |
| 代理商： | NE962R575 |
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
N-CHANNEL GaAs MES FET
NE960R5 SERIES
0.5 W X, Ku-BAND POWER GaAs MES FET
Document No. P14387EJ1V0DS00 (1st edition)
Date Published July 1999 N CP(K)
Printed in Japan
PRELIMINARY DATA SHEET
1999
DESCRIPTION
The NE960R5 Series are 0.5 W GaAs MES FETs designed for middle power transmitter applications for X, Ku-
band microwave communication systems. It is capable of delivering 0.5 watt of output power (CW) with high linear
gain, high efficiency and low distortion and are suitable as driver amplifiers for our X, Ku-band NEZ Series amplifiers
etc. The NE961R500 and the NE960R500 are available in chip form. The NE960R500 has a via hole source
grounding and PHS (Plated Heat Sink) for superior RF performance. The NE960R575 and the NE962R575 are
available in a hermetically sealed ceramic package. The NE962R575 is suitable for oscillator application. Reliability
and performance uniformity are assured by NEC’s stringent quality and control procedures.
FEATURES
High Output Power
High Linear Gain
High Power Added Efficiency: 30 % TYP. @V
DS
= 9 V, I
Dset
= 180 mA, f = 14.5 GHz
: P
o (1 dB)
= +27.5 dBm TYP.
: 9.0 dB TYP.
ORDERING INFORMATION
Part Number
Package
Supplying Form
NE960R500
NE961R500
00 (CHIP)
NE960R575
NE962R575
75
ESD protective envelope
Remark
To order evaluation samples, please contact your local NEC sales office.
(Part number for sample order: NE960R500, NE960R575, NE961R500, NE962R575)
Caution Please handle this device at static-free workstation, because this is an electrostatic sensitive
device.
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