- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄363250 > NE97833 (NEC Corp.) PNP SILICON HIGH FREQUENCY TRANSISTOR PDF資料下載
參數(shù)資料
| 型號： | NE97833 |
| 廠商： | NEC Corp. |
| 英文描述： | PNP SILICON HIGH FREQUENCY TRANSISTOR |
| 中文描述： | 進(jìn)步黨硅高頻晶體管 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 43K |
| 代理商： | NE97833 |
PNP SILICON HIGH
FREQUENCY TRANSISTOR
FEATURES
HIGH GAIN BANDWIDTH PRODUCT:
f
T
= 5.5 GHz TYP
HIGH SPEED SWITCHING CHARACTERISTICS
NPN COMPLIMENT AVAILABLE:
NE02133
HIGH INSERTION POWER GAIN:
|S
21E
|
2
= 10 dB at 1 GHz
DESCRIPTION
NE97833
California Eastern Laboratories
The NE97833 PNP silicon transistor is designed for
ultrahigh speed current mode switching applications and
microwave amplifiers up to 3.5 GHz. The NE97833 offers
excellent performance and reliability at low cost.
33 (SOT 23 STYLE)
PART NUMBER
EIAJ
1
REGISTERED NUMBER
PACKAGE OUTLINE
PARAMETERS AND CONDITIONS
Gain Bandwidth Product at V
CE
= -10 V, I
C
= -15 mA
NE97833
2SA1978
33
TYP
5.5
SYMBOLS
f
T
UNITS
GHz
MIN
4.0
MAX
NF
Noise Figure
at V
CE
= -10 V, I
C
= -3 mA
dB
2.0
3.0
|S
21E
|
2
Insertion Power Gain at V
CE
= -10 V, I
C
= -15 mA, f = 1 GHz
dB
8.0
10.0
h
FE
Forward Current Gain Ratio at V
CE
= -10 V, I
C
= -15 mA
20
40
100
I
CBO
Collector Cutoff Current at V
CB
= -10 V, I
E
= 0
μ
A
-0.1
I
EBO
Emitter Cutoff Current at V
BE
= -2 V, I
C
= 0
μ
A
-0.1
C
RE
2
Feedback Capacitance at V
CB
= -10 V, I
E
= 0 mA, f = 1 MHz
pF
0.5
1.0
P
T
Total Power Dissipation
mW
200
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C)
Notes:
1. Electronic Industrial Association of Japan.
2. Capacitance is measured with emitter and case connected to the guard terminal at the bridge.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NE97833-T1 | PNP SILICON HIGH FREQUENCY TRANSISTOR |
| NECW008AT | NICHIA CHIP TYPE WHITE LED |
| NEL200101-24 | NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier |
| NEL2004F02-24 | Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT02; Number of Contacts:15; Connector Shell Size:14; Connecting Termination:Solder; Circular Shell Style:Box Mount Receptacle |
| NEL2012F03-24 | NPN SILICON EPITAXIAL TRANSISTOR L BAND POWER AMPLIFIER |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NE97833-A | 功能描述:射頻雙極小信號晶體管 PNP High Frequency RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| NE97833-T1 | 制造商:California Eastern Laboratories (CEL) 功能描述:Trans GP BJT PNP 12V 0.05A 3-Pin SOT-23 T/R |
| NE97833-T1-A | 制造商:California Eastern Laboratories (CEL) 功能描述:PNP SILICON HIGH FREQUENCY TRA |
| NE97833-T1B-A | 功能描述:射頻雙極小信號晶體管 PNP High Frequency RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| NE-98 | 制造商:Visual Communications Company (VCC) 功能描述:NE-98 /Refer New Part # 3AD |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。