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參數(shù)資料
| 型號： | NEL2004F02-24 |
| 廠商： | NEC Corp. |
| 元件分類： | 圓形連接器 |
| 英文描述： | Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT02; Number of Contacts:15; Connector Shell Size:14; Connecting Termination:Solder; Circular Shell Style:Box Mount Receptacle |
| 中文描述： | NPN硅外延晶體管L波段功率放大器 |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 89K |
| 代理商： | NEL2004F02-24 |
1996
DATA SHEET
SILICON POWER TRANSISTOR
NEL2004F02-24
NPN SILICON EPITAXIAL TRANSISTOR
L Band Power Amplifier
Document No. P11582EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
DESCRIPTION AND APPLICATIONS
NEL2004F02-24 of NPN epitaxial microwave power transistors
is designed for 1.8-2 GHz PHS/PCN/PCS base station applications.
It incorporates emitter ballast resistors, gold metallizations and
offers a high degree of reliability.
FEATURES
High Linear Power and Gain
Low Internal Modulation Distortion
High Reliability Gold Metallization
Emitter Ballasting
24 V Operation
OUTLINE DIMENSIONS (Unit: mm)
ABSOLUTE MAXIMUM RATING (T
A
= 25 C)
PARAMETER
SYMBOL
SPECIFIED CONDITION
RATINGS
UNIT
Collector to Base Voltage
V
CBO
45
V
Collector to Emitter Voltage
V
CER
R = 10
30
V
Emitter to Base Voltage
V
EBO
3
V
Collector to Emitter Voltage
V
CEO
18
V
Collector Current
I
C
1.5
A
Power Dissipation
P
T
19.4
W
Thermal Resistance
Rth(j-c)
9
C/W
Junction Temperature
Tj
200
C
Storage Temperature
T
stg
–65 to 150
C
2 ±0.2 3 ±0.2
2 ±0.2
2
×
3.2 ±0.3
5
1
1
1
1
3.6 ±0.5
3.6 ±0.5
3
12.4 ±0.2
9.2 ±0.2
4.6 ±0.2
0
4
+
–
6
2
1 - EMITTER
2 - BASE
3 - COLLECTOR
2
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