參數資料
型號： NE97833
廠商： NEC Corp.
英文描述： PNP SILICON HIGH FREQUENCY TRANSISTOR
中文描述： 進步黨硅高頻晶體管
文件頁數： 4/5頁
文件大小： 43K
代理商： NE97833
TYPICAL SCATTERING PARAMETERS
(T
A
= 25
°
C)
NE97833
V
CE
= -5 V, I
C
= -10 mA
FREQUENCY
(GHz)
0.50
0.80
1.00
1.50
2.00
2.50
3.00
4.00
5.00
S
11
S
21
S
12
S
22
K MAG
1
Note:
1. Gain Calculation:
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
MAG
0.274
0.273
0.278
0.308
0.352
0.402
0.449
0.506
0.527
ANG MAG ANG MAG ANG
-149.2
6.102
-177.0
4.037
169.8
3.303
144.6
2.311
125.0
1.808
109.1
1.496
96.4
1.281
79.7
1.023
71.1
0.908
MAG ANG (dB)
0.493
-30.9
0.432
-32.2
0.412
-34.5
0.381
-44.8
0.362
-59.4
0.359
-75.9
0.364
-91.0
0.350
-113.5
0.246
-138.8
96.9
82.0
74.5
58.7
45.3
33.5
23.6
9.1
-1.8
0.063
0.093
0.114
0.170
0.229
0.288
0.345
0.458
0.574
68.1
70.1
70.3
68.1
63.9
58.3
52.4
40.7
27.4
0.97
1.07
1.09
1.08
1.03
0.99
0.95
0.91
0.92
19.9
14.7
12.8
9.6
7.8
7.2
5.7
3.5
2.0
V
CE
= -8 V, I
C
= -10 mA
0.50
0.80
1.00
1.50
2.00
2.50
3.00
4.00
5.00
0.252
0.240
0.243
0.272
0.316
0.369
0.418
0.479
0.503
-140.2
-171.6
173.7
145.9
125.3
109.0
96.4
79.9
71.7
6.426
4.270
3.496
2.445
1.911
1.582
1.353
1.076
0.950
98.5
83.5
76.0
60.5
47.2
35.6
25.5
10.7
-0.4
0.060
0.089
0.109
0.162
0.219
0.276
0.333
0.445
0.563
68.7
70.6
70.9
60.5
65.0
59.8
54.2
42.9
30.2
0.523
0.463
0.443
0.515
0.393
0.388
0.392
0.379 -106.3
0.278 -127.3
-29.0
-30.1
-32.3
-43.9
-55.2
-70.6
-85.0
0.95
1.05
1.08
1.11
1.02
0.98
0.94
0.90
0.90
20.3
15.4
13.4
9.8
8.4
7.6
6.1
3.8
2.3
V
CE
= -10 V, I
C
= -15 mA
0.50
0.80
1.00
1.50
2.00
2.50
3.00
4.00
5.00
0.555
0.399
0.348
0.314
0.342
0.393
0.446
0.515
0.529
-80.8
-121.8
-143.5
173.5
142.8
120.2
103.4
81.7
69.6
4.097
3.325
2.864
2.107
1.669
1.382
1.179
0.934
0.844
116.8
94.8
84.2
64.5
49.0
36.0
25.6
11.9
3.0
0.076
0.094
0.106
0.140
0.186
0.241
0.302
0.433
0.575
55.1
53.5
55.4
69.0
62.8
61.5
57.9
47.8
34.3
0.697
0.600
0.564
0.411
0.494
0.490
0.496
0.484 -105.8
0.382 -128.7
-28.4
-32.6
-35.2
-39.4
-56.1
-70.2
-83.7
0.65
0.89
1.00
1.07
1.08
1.00
0.93
0.87
0.90
17.3
15.5
14.3
10.2
7.8
7.4
5.9
3.3
1.7
V
CE
= -10 V, I
C
= -3 mA
0.50
0.80
1.00
1.50
2.00
2.50
3.00
4.00
5.00
0.214
0.215
0.221
0.254
0.300
0.352
0.402
0.463
0.489
-153.1
179.7
166.8
141.5
122.3
107.1
95.0
79.5
72.1
6.846
4.489
3.664
2.554
1.992
1.648
1.410
1.121
0.984
96.2
82.4
75.4
60.6
47.7
36.2
26.3
11.3
-0.2
0.058
0.087
0.108
0.163
0.220
0.276
0.331
0.440
0.555
73.2
74.0
73.7
70.6
66.0
60.4
54.6
43.4
31.0
0.506
0.456
0.439
0.441
0.393
0.387
0.389
0.377 -102.6
0.277 -121.3
-27.0
-27.9
-30.1
-41.8
-52.7
-68.0
-82.1
0.99
1.06
1.07
1.05
1.01
0.97
0.94
0.89
0.89
20.7
15.6
13.7
10.6
8.9
7.8
6.3
4.1
2.5
MAG =
|S
21
|
|S
12
|
K - 1
).
(
K
±
= S
11
S
22
- S
21
S
12
,
When K
≤
1, MAG is undefined and MSG values are used. MSG =
|S
21
|
|S
12
|
, K =
1 + |
| - |S
11
| - |S
22
|
2 |S
12
S
21
|
2
NE97833
V
CE
= -8 V, I
C
= -10 mA
0.2
0.4
0.8
1
1.5
2
3
4 5
10 20
50
-50
-20
20
10
5
4
3
2
1.5
1
0.8
0.6
0.4
0.2
-0.2
-0.4
-0.6
-0.8
-1
-1.5
-2
-3
-4
-5
-10
S
11
S
22
0.6
270
180
225
315
135
0
90
45
S
12
S
21
2.5
5.0
0.1 0.2 0.3
0.4 0.5
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相關代理商/技術參數
參數描述
NE97833-A 功能描述:射頻雙極小信號晶體管 PNP High Frequency RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel
NE97833-T1 制造商:California Eastern Laboratories (CEL) 功能描述:Trans GP BJT PNP 12V 0.05A 3-Pin SOT-23 T/R
NE97833-T1-A 制造商:California Eastern Laboratories (CEL) 功能描述:PNP SILICON HIGH FREQUENCY TRA
NE97833-T1B-A 功能描述:射頻雙極小信號晶體管 PNP High Frequency RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel
NE-98 制造商:Visual Communications Company (VCC) 功能描述:NE-98 /Refer New Part # 3AD
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