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參數(shù)資料
| 型號： | NE72218-T2 |
| 廠商： | NEC Corp. |
| 英文描述： | RES-MF 150 OHM 1/4W 1% |
| 中文描述： | C到X波段功率放大器C到X波段振蕩N溝道砷化鎵場效應(yīng)晶體管 |
| 文件頁數(shù)： | 9/12頁 |
| 文件大小： | 60K |
| 代理商： | NE72218-T2 |
Data Sheet P12750EJ3V0DS00
9
NE72218
PRECAUTION
(1) Because this device is a GaAs MES FET with a Schottky barrier gate structure, it is necessary that sufficient
care be taken regarding static electricity and strong electric fields.
Take measures against static electricity and make sure the body is earthed when mounting the device.
(2) Follow the procedure below when operating the device by a gate-and-drain-independent dual power supply.
Directly ground both the source pins.
Fix V
GS
to approximately
4 V.
Increase V
DS
to a predetermined voltage level (within the recommended operating range of V
DS
).
Adjust V
GS
in line with a predetermined I
D
.
(3) It is recommended that the bias application circuit be able to have a fixed voltage and current.
(4) Adjust the I/O matching circuit after turning the bias OFF.
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions. For soldering
methods and conditions other than those recommended below, contact your NEC sales representative.
Soldering Method
Soldering Conditions
Recommended Condition Symbol
Infrared Reflow
Package peak temperature: 235
°
C or below,
Time: 30 seconds or less (at 210
°
C or higher),
Count: 3 times or less, Exposure limit: None
Note
IR35-00-3
VPS
Package peak temperature: 215
°
C or below,
Time: 40 seconds or less (at 200
°
C or higher),
Count: 3 times or less, Exposure limit: None
Note
VP15-00-3
Wave Soldering
Soldering bath temperature: 260
°
C or below,
Time: 10 seconds or less,
Count: 1 time, Exposure limit: None
Note
WS60-00-1
Partial Heating
Pin temperature: 230
°
C or below,
Time: 10 seconds or less (per pin row),
Exposure limit: None
Note
Note
After opening the dry pack, store it at 25
°
C or less and 65 % RH or less for the allowable storage period.
Caution Do not use different soldering methods together (except for partial heating).
For the details the recommended soldering conditions, refer to the document
SEMICONDUCTOR DEVICE
MOUNTING TECHNOLOGY MANUAL (C10535E)
.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NE722S01 | NECs C TO X BAND N-CHANNEL GaAs MES FET |
| NE722S01-T1 | NECs C TO X BAND N-CHANNEL GaAs MES FET |
| NE722S01-T1B1 | NECs C TO X BAND N-CHANNEL GaAs MES FET |
| NE734 | NPN SILICON GENERAL PURPOSE TRANSISTOR |
| NE73430 | NPN SILICON GENERAL PURPOSE TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NE722S01 | 功能描述:射頻GaAs晶體管 C-X Band GaAs MESFET RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| NE722S01-T1 | 功能描述:射頻GaAs晶體管 C-X Band GaAs MESFET RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| NE722S01-T1B | 功能描述:射頻GaAs晶體管 C-X Band GaAs MESFET RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| NE722S01-T1B1 | 制造商:NEC 制造商全稱:NEC 功能描述:NECs C TO X BAND N-CHANNEL GaAs MES FET |
| NE734 | 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON GENERAL PURPOSE TRANSISTOR |
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