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參數(shù)資料
| 型號： | NE722S01-T1 |
| 廠商： | NEC Corp. |
| 英文描述： | NECs C TO X BAND N-CHANNEL GaAs MES FET |
| 中文描述： | 鄰舍C至X波段N溝道砷化鎵場效應(yīng)晶體管 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 128K |
| 代理商： | NE722S01-T1 |
NEC's C TO X BAND
N-CHANNEL GaAs MES FET
NE722S01
FEATURES
HIGH POWER GAIN:
GS = 6 dB TYP at f = 12 GHz
OUTPUT POWER
(at 1 dB compression)
:
15 dB TYP at f = 12 GHz
LOW NOISE/HIGH GAIN:
NF = 0.9 dB TYP, Ga = 12 dB TYP at f = 4 GHz
GATE LENGTH:
L
G
= 0.8
μ
m (recessed gate)
GATE WIDTH:
W
G
= 400
μ
m
PART NUMBER
PACKAGE OUTLINE
NE722S01
S01
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
I
GSO
Gate to Source Leak Current, V
GS
= -5 V
uA
–
1.0
10
I
DSS
Saturated Drain Current, V
DS
= 3 V, V
GS
= 0 V
mA
60
90
120
V
GS
Gate to Source Cutoff Voltage, V
DS
= 3 V, I
D
= 100
μ
A
V
-0.5
–
-4.0
g
m
Transconductance, V
DS
= 3 V, I
DS
= 30 mA
mS
20
45
–
G
S
Power Gain, V
DS
= 3 V, I
DS
= 30 mA, f = 12 GHz
dB
–
6
–
P1dB
Output Power at 1 dB Gain Compression Point at
V
DS
= 3 V, I
DS
= 30 mA, f = 12 GHz
dBm
15.0
NF
Noise Figure, V
DS
= 3 V, I
DS
= 10 mA, f = 4 GHz
dB
–
0.9
–
Ga
Associated Gain, V
DS
= 3 V, I
DS
= 10 mA, f = 4 GHz
dB
–
12
_
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C)
PACKAGE OUTLINE SO1
1. Source
2. Drain
3. Source
4. Gate
OUTLINE DIMENSION
(Units in mm)
2.0 ± 0.2
0.65 TYP
20±02
4
2
3
1
0.5
TYP
2.0±0.2
1.9 ± 0.2
1.6
0.125 ± 0.05
0.4 MAX
4.0 ± 0.2
1.5 MAX
P
APPLICATIONS
C to X band low noise amplifiers
C to X band oscillators
DESCRIPTION
NEC's NE722S01 is a low cost GaAs MESFET suitable for
both amplifier and oscillator applications through X-band.
The device features a 0.8 micron recessed gate, triple
epitaxial technology and is fabricated using ion implantation
for improved RF and DC performance and uniformity. This
device's low phase noise and high fT makes it a excellent
choice for oscillator applications on a digital LNB (Low
Noise Block). The NE722S01 is housed in a low cost plastic
package which is available in Tape and Reel.
NEC's stringent quality assurance and test procedures
ensure the highest reliability performance.
California Eastern Laboratories
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NE722S01-T1B1 | NECs C TO X BAND N-CHANNEL GaAs MES FET |
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| NE73430 | NPN SILICON GENERAL PURPOSE TRANSISTOR |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NE722S01-T1B | 功能描述:射頻GaAs晶體管 C-X Band GaAs MESFET RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
| NE722S01-T1B1 | 制造商:NEC 制造商全稱:NEC 功能描述:NECs C TO X BAND N-CHANNEL GaAs MES FET |
| NE734 | 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON GENERAL PURPOSE TRANSISTOR |
| NE73412 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 50MA I(C) | TO-72 |
| NE73416 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 50MA I(C) | CAN |
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