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參數(shù)資料
| 型號(hào)： | NE73430-T1 |
| 廠商： | NEC Corp. |
| 英文描述： | NPN SILICON GENERAL PURPOSE TRANSISTOR |
| 中文描述： | NPN硅晶體管一般用途 |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大小： | 39K |
| 代理商： | NE73430-T1 |
NPN SILICON GENERAL
PURPOSE TRANSISTOR
NE734
SERIES
FEATURES
LOW NOISE FIGURE:
< 3 dB at 500 MHz
HIGH GAIN:
15 dB at 500 MHz
HIGH GAIN BANDWIDTH PRODUCT:
2 GHz
(3 GHz for the NE73435)
SMALL COLLECTOR CAPACITANCE:
1 pF
HIGH RELIABILITY METALLIZATION
DESCRIPTION
The NE734 series of NPN silicon general purpose UHF tran-
sistors provide the designer with a wide selection of reliable
transistors for high speed logic and wide-band low noise
amplifier applications. The series uses NEC's highly reliable
platinum-silicide, titanium, platinum, and gold metallization
system to assure uniform performance and reliability. The
35 (MICRO-X)
30 (SOT 323 STYLE)
California Eastern Laboratories
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C)
PART NUMBER
EIAJ
1
REGISTERED NUMBER
PACKAGE OUTLINE
PARAMETERS AND CONDITIONS
Gain Bandwidth Product at
V
CE
= 10 V, I
C
= 10 mA
V
CE
= 10 V, I
C
= 5 mA
Minimum Noise Figure
2
at
V
CE
= 10 V, I
C
= 3 mA, f = 0.5 GHz
V
CE
= 10 V, I
C
= 5 mA, f = 0.9 GHz
Maximum Available Gain
3
at
V
CE
= 10 V, I
C
= 10 mA,
NE73430
2SC4185
30
TYP
NE73435
2SC2148
35
TYP
SYMBOLS
f
T
UNITS
MIN
MAX
MIN
MAX
GHz
GHz
1.5
3.0
2.3
NF
MIN
dB
dB
2.1
3.5
4.0
MAG
f = 0.5 GHz
f = 1 GHz
dB
dB
17
18
13
|S
21E
|
2
Insertion Power Gain at V
CE
= 10 V, I
C
= 10 mA,
f = 0.5 GHz
f = 1 GHz
Forward Current Gain Ratio at
V
CE
= 10 V, I
C
= 10 mA
V
CE
= 10 V, I
C
= 5 mA
Collector Cutoff Current at V
CB
= 15 V, I
E
= 0
Emitter Cutoff Current at V
EB
= 2 V, I
C
= 0
Collector to Base Capacitance
4
at
V
CB
= 10 V, I
C
= 0 mA, f = 1 MHz
Total Power Dissipation
Thermal Resistance (Junction to Case)
dB
dB
16
9
8
8
h
FE
25
100
200
40
100
180
0.1
I
CBO
I
EBO
C
CB
μ
A
μ
A
0.1
0.1
pF
mW
°
C/W
1.5
0.75
150
833
.55
1.5
250
550
P
T
R
TH
MAG =
|S
21
|
|S
12
|
K - 1
).
(
K
±
= S
11
S
22
- S
21
S
12
,
When K
≤
1, MAG is undefined and MSG values are used. MSG =
|S
21
|
|S
12
|
, K =
1 + |
| - |S
11
| - |S
22
|
2 |S
12
S
21
|
2
Notes:
1. Electronic Industrial Association of Japan.
2. Input and output are tuned for optimum noise figures.
3. Maximum Available Gain (MAG) is calculated
4. C
CB
measurement employs a three-terminal capacitance bridge incorporating a guard circuit. The emitter terminal shall be connected to the
guard terminal.
NE73433 is in the plastic Mini-Mold package designed for
high-speed automated assembly operations for large volume
hybrid ICs. For hybrid MIC applications requiring more perfor-
mance, the NE73435 is recommended. This device is pack-
aged in the economical metal-ceramic, hermetic Micro-X pack-
age.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NE73432 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 50MA I(C) | TO-92 |
| NE73432B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 50MA I(C) | TO-92 |
| NE73432E | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 50MA I(C) | TO-92 |
| NE73433 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 50MA I(C) | TO-236 |
| NE73435 | 功能描述:射頻雙極小信號(hào)晶體管 REORD 551-NE94430 MICRO-X NPN GP SW RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
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