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參數(shù)資料
| 型號： | NE76000L |
| 廠商： | NEC Corp. |
| 英文描述： | LOW NOISE L TO Ku BAND GaAs MESFET |
| 中文描述： | 低噪聲L降至Ku波段功率GaAs MESFET |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 52K |
| 代理商： | NE76000L |
PART NUMBER
PACKAGE OUTLINE
NE76000
00 (CHIP)
NE76000L
00 (CHIP)
SYMBOLS
NF
OPT1
PARAMETERS AND CONDITIONS
Optimum Noise Figure at V
DS
= 3 V, I
DS
= 10 mA,
f = 4 GHz
f = 12 GHz
Associated Gain at V
DS
= 3 V, I
DS
= 10 mA,
f = 4 GHz
f = 12 GHz
Output Power at 1 dB Compression, V
DS
= 3 V, I
DS
= 30 mA, f = 12 GHz
Saturated Drain Current at V
DS
= 3 V, V
GS
= 0
Pinch-off Voltage at V
DS
= 3 V, I
DS
= 0.1 mA
Transconductance, V
DS
= 3 V, I
DS
= 10 mA
Gate to Source Leakage Current, V
GS
= -4 V
Thermal Resistance (Channel to Case)
UNITS
MIN
TYP
MAX
MIN
TYP
MAX
dB
dB
0.6
1.6
1.8
1.8
G
A1
dB
dB
dBm
mA
V
mS
μ
A
°
C/W
13.0
9.0
14.5
30
-0.8
40.0
1.0
8.0
8.0
P
1dB
I
DSS
V
P
g
m
I
GSO
15
-3.0
30.0
50
-0.5
50
-3.0
80
-0.5
-0.8
30.0
1.0
10.0
190
R
TH (CH-C)2
190
FEATURES
LOW NOISE FIGURE
NF = 1.6 dB TYP at f = 12 GHz
HIGH ASSOCIATED GAIN
G
A
= 9 dB TYP at f = 12 GHz
L
G
= 0.3
μ
m, W
G
= 280
μ
m
ION IMPLANTATION
LOW NOISE
L TO Ku BAND GaAs MESFET
NE76000
Notes:
1. RF performance is determined by packaging and testing 10 samples per wafer; wafer rejection criteria for standard devices is 2 rejects for 10
samples.
2. Chip mounted on infinite heat sink.
ELECTRICAL SPECIFICATIONS
(T
A
= 25
°
C)
N
A
A
NOISE FIGURE & ASSOCIATED GAIN
vs. FREQUENCY
V
DS
= 3 V, I
DS
= 10 mA
Frequency, f (GHz)
DESCRIPTION
The NE76000 provides a low noise figure and high associated
gain through K-Band. The NE760 devices are fabricated by
ion implantation for improved RF and DC performance, reli-
ability, and uniformity. These devices feature a recessed 0.3
micron gate and triple epitaxial technology. The surface of the
device, except for bonding pads, is passivated with SiO
2
and
Si
3
N
4
for scratch protection as well as surface stability.
NEC's stringent quality assurance and test procedures en-
sure the highest reliability and performance.
California Eastern Laboratories
Ga
NF
1 10 20
4
3.5
3
2.5
2
1.5
1
0.5
0
24
21
18
15
12
9
6
3
0
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