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參數(shù)資料
| 型號(hào)： | NE76084-T1 |
| 廠商： | NEC Corp. |
| 英文描述： | C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET |
| 中文描述： | C到Ku波段低噪聲放大器N溝道砷化鎵場(chǎng)效應(yīng)晶體管 |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 62K |
| 代理商： | NE76084-T1 |
NE76084
GaAs MES FET
FEATURES
Low noise figure & High associated gain
NF = 1.6 dB TYP., Ga = 9.0 dB TYP. at f = 12 GHz
Gate length: L
g
= 0.3
μ
m
Gate width : W
g
= 280
μ
m
ORDERING INFORMATION
PART NUMBER
SUPPLYING
FORM
LEAD LENGTH
MARKING
NE76084-SL
STICK
L = 1.7 mm MIN.
E
NE76084-T1
Tape & reel
1000 pcs./reel
L = 1.0
±
0.2 mm
NE76084-T1A
Tape & reel
5000 pcs./reel
L = 1.0
±
0.2 mm
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
Drain to Source Voltage
Gate to Source Voltage
Gate to Drain Voltage
Drain Current
Total Power Dissipation
Channel Temperature
Storage Temperature
V
DS
V
GS
V
GD
I
D
P
tot
T
ch
T
stg
5.0
–3.0
–5.0
I
DSS
240
175
V
V
V
mA
mW
°
C
°
C
–65 to +175
ELECTRICAL CHARACTERISTICS (T
A
= 25
°
C)
PART NUMBER
NE76084
NE76084-2.4
PACKAGE CODE
84
84
UNIT
TEST CONDITIONS
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
Gate to Source Leak Current
I
GSO
10
10
μ
A
V
GS
= –4 V
Saturated Drain Current
I
DSS
15
30
50
15
30
50
mA
V
DS
= 3 V, V
GS
= 0 V
Gate to Source Cutoff Voltage
V
GS(off)
–0.5
–0.8
–3.0
–0.5
–0.8
–3.0
V
V
DS
= 3 V, I
DS
= 100
μ
A
Transconductance
g
m
30
40
70
30
40
70
mS
V
DS
= 3 V, I
DS
= 10 mA
Noise Figure
NF
1.6
1.8
1.8
2.4
dB
V
DS
= 3 V, I
DS
= 10 mA
Associated Gain
Ga
8.0
9.0
8.0
9.0
dB
f = 12 GHz
C to Ku BAND LOW NOISE AMPLIFIER
N-CHANNEL GaAs MES FET
Document No. P11843EJ2V0DS00 (2nd edition)
(Previous No. TC-2259)
Date Published August 1996 P
Printed in Japan
1989
DATA SHEET
1.78 ± 0.2
1
L
L
L
0.5 TYP.
L
4
2
3
1
0
E
PACKAGE DIMENSIONS
(Unit: mm)
1
0
1. Source
2. Drain
3. Source
4. Gate
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| NE76084-T1A | C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET |
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| NE85001 | 1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET |
| NE8500100 | 1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NE76084-T1A | 制造商:NEC 制造商全稱:NEC 功能描述:C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET |
| NE76100 | 制造商:NEC 制造商全稱:NEC 功能描述:GENERAL PURPOSE GaAs MESFET |
| NE76100_99 | 制造商:NEC 制造商全稱:NEC 功能描述:GENERAL PURPOSE GaAs MESFET |
| NE76100M | 制造商:NEC 制造商全稱:NEC 功能描述:GENERAL PURPOSE GaAs MESFET |
| NE76100N | 制造商:NEC 制造商全稱:NEC 功能描述:GENERAL PURPOSE GaAs MESFET |
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