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參數(shù)資料
| 型號(hào)： | NE8500100 |
| 廠商： | NEC Corp. |
| 英文描述： | 1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET |
| 中文描述： | 1瓦C波段砷化鎵場(chǎng)效應(yīng)管N溝道砷化鎵場(chǎng)效應(yīng)晶體管 |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 41K |
| 代理商： | NE8500100 |
1996
PRELIMINARY DATA SHEET
GaAs MES FET
NE85001 SERIES
1 W C-BAND POWER GaAs FET
N-CHANNEL GaAs MES FET
Document No. P10968EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
DESCRIPTION
The NE8500199 Power GaAs FET covers 2 GHz to 10 GHz frequency range for commercial amplifier, oscillator
applications and so on.
NE8500100 is the two-cells recessed gate chip used in ‘99’ package.
The device incorporates Ti-Al gate and silicon dioxide glassivation. To reduce the thermal resistance, the device
has a PHS. (Plated Heat Sink)
NEC’s strigent quality assurance and test procedures assure the highest reliability and performance.
FEATURES
Class A operation
High power output
High reliability
SELECTION CHART
PERFORMANCE SPECIFIED
PART NUMBER
FORM
Pout (
**
)
(dBm)
G
L
(
**
)
(dB)
USABLE
FREQUENCY
(GHz)
NE8500100(*)
NE8500100-WB
NE8500100-RG
chip
28.5 min
9.0 typ
2.0 to 10
NE8500199
package
28.5 min
9.0 typ
2.0 to 10
*
WB, RG indicate a type of containers for chips.
WB: black carrier, RG: ring,: gel-pack,
**
Specified at the condition at the last page.
PHYSICAL DIMENSIONS
NE8500100 (CHIP) (unit:
μ
m)
PACKAGE CODE-99 (unit: mm)
4.0 MIN BOTH LEADS
SOURCE
GATE
DRAIN
0.6 ±0.1
5.2 ±0.3
11.0 ±0.3
15.0 ±0.3
6.0 ±0.2
0.1
1.2
0.2 MAX.
1.0 ±0.1
2.2 ±0.3
2 PLACES
φ
4.3 ±0.2
1.7 ±0.15
4.0
5.0 MAX.
780
640
170
100
146
100
65
100
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NE8500100-RG | 1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET |
| NE8500199 | 1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET |
| NE8500200-WB | 2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET |
| NE85002 | 2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET |
| NE8500200 | 2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NE8500100_00 | 制造商:NEC 制造商全稱:NEC 功能描述:C-BAND MEDIUM POWER GaAs MESFET |
| NE8500100-RG | 制造商:NEC 制造商全稱:NEC 功能描述:1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET |
| NE8500100-WB | 制造商:NEC 制造商全稱:NEC 功能描述:1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET |
| NE8500199 | 功能描述:射頻GaAs晶體管 1W C Band MESFET RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| NE85002 | 制造商:NEC 制造商全稱:NEC 功能描述:2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET |
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