- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄363250 > NE85002 (NEC Corp.) 2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET PDF資料下載
參數(shù)資料
| 型號(hào)： | NE85002 |
| 廠商： | NEC Corp. |
| 英文描述： | 2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET |
| 中文描述： | 2瓦C波段砷化鎵場效應(yīng)管N溝道砷化鎵場效應(yīng)晶體管 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 48K |
| 代理商： | NE85002 |
1996
PRELIMINARY DATA SHEET
GaAs MES FET
NE85002 SERIES
2 W C-BAND POWER GaAs FET
N-CHANNEL GaAs MES FET
Document No. P10969EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
DESCRIPTION
The NE8500295 power GaAs FET covers 3.5 to 8.5 GHz frequency range with three different Class A, 2.0 W
partially matched devices. Each packaged device has an input lumped element matching network.
NE8500200 is the six-cells recessed gate chip used in ‘95’ package.
The device incorporates Ti-Al gate and silicon dioxide glassivation. To reduce the thermal resistance, the device
has a PHS. (Plated Heat Sink)
NEC’s strigent quality assurance and test procedures assure the highest reliability and performance.
FEATURES
Class A operation
High power output
High reliability
SELECTION CHART
PERFORMANCE SPECIFIED
PART NUMBER
Pout (
**
)
(dBm)
G
L
(
**
)
(dB)
USABLE
FREQUENCY
(GHz)
NE8500200(
*
)
NE8500200-WB(
*
)
NE8500200-RG(
*
)
33.8 min
8.0 min
2.0 to 10
NE8500295-4
33.8 min
10.5 min
3.5 to 5.5
NE8500295-6
33.8 min
9.5 min
5.5 to 7.5
NE8500295-8
33.5 min
8.0 min
7.5 to 8.5
*
GB, RG indicate a type of containers for chips.
WB: black carrier, RG: ring,
**
Specified at the condition at the last page.
PHYSICAL DIMENSIONS
NE8500200 (CHIP) (unit:
μ
m)
PACKAGE CODE-95 (unit: mm)
640
240
100
110
100
100
90
100
1800
14.0 ±0.3
18.5 MAX.
7.2 ±0.2
4.5 MAX.
0.1
5.9 ±0.2
4.0 MIN.
0.7 ±0.1
GATE
2.5 ±0.3 DIA
SOURCE
0.2 MAX.
2.1 ±0.15
1.0
DRAIN
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NE8500200 | 2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET |
| NE8500200-RG | 2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET |
| NE8500295-4 | 2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET |
| NE8500295-6 | 2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET |
| NE8500295-8 | 2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NE85002_02 | 制造商:NEC 制造商全稱:NEC 功能描述:2 WATT C-BAND POWER GaAs MESFET |
| NE8500200 | 制造商:NEC 制造商全稱:NEC 功能描述:2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET |
| NE8500200-RG | 制造商:NEC 制造商全稱:NEC 功能描述:2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET |
| NE8500200-WB | 制造商:NEC 制造商全稱:NEC 功能描述:2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET |
| NE8500295-4 | 功能描述:射頻GaAs晶體管 2W C Band MESFET RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。