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參數(shù)資料
| 型號： | NE85002 |
| 廠商： | NEC Corp. |
| 英文描述： | 2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET |
| 中文描述： | 2瓦C波段砷化鎵場效應管N溝道砷化鎵場效應晶體管 |
| 文件頁數(shù)： | 5/8頁 |
| 文件大小： | 48K |
| 代理商： | NE85002 |
NE85002 SERIES
5
NE8500295-8
V
DS
= 10 V, I
DS
= 450 mA, V
GS
= –1.386 V, I
G
= 0.0 mA, R
G
= 1 k
FREQUENCY
GHz
S
11
S
21
S
12
S
22
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
0.100
0.500
1.000
1.500
2.000
2.500
3.000
3.500
3.600
3.700
3.800
3.900
4.000
4.200
4.400
4.500
4.600
4.800
5.000
5.200
5.400
5.500
5.600
5.800
6.000
6.200
6.400
6.500
6.600
6.800
7.000
7.200
7.400
7.500
7.600
7.800
8.000
8.200
8.400
8.500
8.600
8.800
9.000
9.200
9.400
9.500
9.600
9.800
10.000
0.971
0.937
0.934
0.947
0.939
0.921
0.906
0.887
0.886
0.877
0.876
0.869
0.866
0.851
0.840
0.836
0.832
0.821
0.805
0.783
0.752
0.734
0.714
0.656
0.587
0.494
0.374
0.303
0.229
0.079
0.116
0.240
0.352
0.394
0.436
0.497
0.536
0.564
0.575
0.570
0.577
0.541
0.497
0.439
0.381
0.354
0.344
0.287
0.288
–54.8
–146.3
–174.0
170.9
158.3
153.8
145.4
137.0
135.1
133.2
131.3
128.9
126.2
121.7
116.7
113.9
111.6
105.7
98.8
91.8
83.9
80.2
76.1
67.3
57.4
45.8
31.5
23.5
13.6
–26.8
–152.8
–179.6
164.3
158.7
151.2
139.2
126.7
113.4
98.5
91.0
81.8
63.6
45.2
27.2
12.6
17.977
6.354
3.391
2.382
1.869
1.473
1.335
1.272
1.264
1.269
1.267
1.265
1.252
1.285
1.322
1.343
1.365
1.415
1.483
1.549
1.631
1.658
1.703
1.791
1.893
1.997
2.096
2.124
2.155
2.143
2.078
2.008
1.894
1.824
1.768
1.663
1.587
1.530
1.455
1.413
1.369
1.245
1.105
0.960
0.829
0.787
0.736
0.655
0.622
150.9
98.2
74.5
56.2
40.3
27.7
15.9
2.7
–0.2
–2.7
–5.6
–8.6
–11.1
–16.2
–22.3
–25.5
–29.0
–35.8
–43.6
–51.8
–60.6
–64.9
–70.0
–79.7
–90.6
–102.5
–116.3
–122.7
–129.9
–145.1
–159.4
–171.7
174.2
167.5
161.2
149.3
137.2
124.8
110.7
103.5
96.0
80.9
66.6
53.7
43.5
38.6
33.3
25.2
17.0
0.004
0.016
0.018
0.020
0.026
0.023
0.027
0.034
0.034
0.036
0.038
0.040
0.041
0.040
0.042
0.044
0.047
0.050
0.056
0.059
0.062
0.065
0.066
0.070
0.073
0.075
0.076
0.075
0.073
0.067
0.063
0.056
0.046
0.042
0.039
0.030
0.025
0.018
0.027
0.033
0.040
0.058
0.069
0.073
0.065
0.067
0.073
0.074
0.068
35.4
24.0
22.3
20.8
28.1
22.7
20.9
19.9
20.2
19.4
14.9
15.7
10.2
8.7
7.7
6.0
5.7
2.0
–4.1
–9.0
–16.2
–18.9
–23.4
–32.0
–41.5
–51.6
–63.3
–69.9
–76.8
–89.3
–101.5
–113.7
–126.4
–134.1
–142.6
–163.8
165.8
116.4
66.5
49.5
31.6
–0.7
–26.2
–47.4
–60.9
–59.8
–63.3
–83.8
–86.2
0.427
0.464
0.492
0.513
0.534
0.573
0.592
0.603
0.603
0.601
0.605
0.605
0.602
0.586
0.582
0.583
0.583
0.585
0.592
0.604
0.620
0.628
0.641
0.666
0.695
0.729
0.769
0.788
0.809
0.840
0.874
0.886
0.887
0.883
0.886
0.872
0.858
0.849
0.846
0.843
0.834
0.814
0.773
0.740
0.730
0.747
0.741
0.718
0.712
–155.9
–172.3
–178.9
177.4
173.3
169.5
168.1
165.7
165.0
164.4
163.0
161.8
160.3
159.0
156.6
155.2
154.3
152.1
149.2
146.3
144.1
142.8
141.5
139.5
138.7
136.6
134.6
133.4
132.3
129.0
125.7
123.0
118.2
115.9
113.5
108.6
102.2
94.9
86.0
81.5
76.1
67.1
59.8
54.6
53.4
51.7
49.9
47.3
46.8
3.8
–4.1
–19.2
–34.5
相關PDF資料 |
PDF描述 |
|---|---|
| NE8500200 | 2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET |
| NE8500200-RG | 2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET |
| NE8500295-4 | 2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET |
| NE8500295-6 | 2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET |
| NE8500295-8 | 2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| NE85002_02 | 制造商:NEC 制造商全稱:NEC 功能描述:2 WATT C-BAND POWER GaAs MESFET |
| NE8500200 | 制造商:NEC 制造商全稱:NEC 功能描述:2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET |
| NE8500200-RG | 制造商:NEC 制造商全稱:NEC 功能描述:2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET |
| NE8500200-WB | 制造商:NEC 制造商全稱:NEC 功能描述:2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET |
| NE8500295-4 | 功能描述:射頻GaAs晶體管 2W C Band MESFET RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
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