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參數(shù)資料
| 型號： | NE8500100 |
| 廠商： | NEC Corp. |
| 英文描述： | 1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET |
| 中文描述： | 1瓦C波段砷化鎵場效應管N溝道砷化鎵場效應晶體管 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 41K |
| 代理商： | NE8500100 |
NE85001 SERIES
2
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
Drain to Source Voltage
Gate to Drain Voltage
Gate to Source Voltage
Total Power Disipation(*)
Drain Current
Gate Current
Channel Temperature
Storage Temperature
V
DSX
V
GDX
V
GSX
P
T
I
D
I
G
T
ch
T
stg
15
–18
–12
6.0
1.12
6.0
175
V
V
V
W
A
mA
C
C
*T
C
= 25 C
–65 to 175
RECOMMENDING OPERATION RANDGE
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
Drain to Source Voltage
V
DS
9
–
10
V
Channel Temperature
T
ch
–
–
130
C
Input Power
Gcomp
–
–
3
dBcomp
Gate Resistance
Rg
–
–
1
k
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Saturated Drain Current
Idss
430
–
860
mA
Vds = 2.5 V, Vgs = 0 V
Pinch-off Voltage
V
P
–3.0
–
–1.0
V
Vds = 2.5 V, Ids = 4 mA
Transconductance
gm
–
300
–
mS
Vds = 2.5 V, Ids = Idss
Thermal Resistance
R
th
–
–
30
C/W
PERFORMANCE SPECIFICATIONS (T
A
= 25 C)
PART NUMBER
PACKAGE CODE
CHARACTERISTIC
SYMBOL
Output Power
P
O
Gate to source
Current
Igs
Linear Gain
G
L
*
**
The same conditions as the above except this.
Pin for Pout specification.
NE8500100
NE8500100-WG
NE8500100-RG
CHIP
MIN.
TYP.
MAX.
28.5
–
–
–2.0
–
2.0
–
9
–
NE8500199
99
MIN.
TYP.
MAX.
28.5
–
–
–2.0
–
2.0
–
9
–
UNIT
dBm
mA
dB
TEST CONDITIONS
Pin
≤
11 dBm (
**
)
f = 7.2 GHz
Vds = 10 V
Ids = 200 mA set
Rg = 1 k
Pin = 21.0 dBm(
*
)
相關PDF資料 |
PDF描述 |
|---|---|
| NE8500100-RG | 1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET |
| NE8500199 | 1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET |
| NE8500200-WB | 2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET |
| NE85002 | 2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET |
| NE8500200 | 2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| NE8500100_00 | 制造商:NEC 制造商全稱:NEC 功能描述:C-BAND MEDIUM POWER GaAs MESFET |
| NE8500100-RG | 制造商:NEC 制造商全稱:NEC 功能描述:1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET |
| NE8500100-WB | 制造商:NEC 制造商全稱:NEC 功能描述:1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET |
| NE8500199 | 功能描述:射頻GaAs晶體管 1W C Band MESFET RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
| NE85002 | 制造商:NEC 制造商全稱:NEC 功能描述:2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET |
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