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參數(shù)資料
| 型號： | NE76000L |
| 廠商： | NEC Corp. |
| 英文描述： | LOW NOISE L TO Ku BAND GaAs MESFET |
| 中文描述： | 低噪聲L降至Ku波段功率GaAs MESFET |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 52K |
| 代理商： | NE76000L |
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25
°
C)
SYMBOLS
PARAMETERS
UNITS
RATINGS
V
DS
Drain to Source Voltage
V
5
V
GD
Gate to Drain Voltage
V
-5
V
GS
Gate to Source Voltage
V
-3
I
DS
Drain Current
mA
I
DSS
P
IN
RF Input (CW)
dBm
+15
T
CH
Channel Temperature
°
C
175
T
STG
Storage Temperature
°
C
-65 to +175
P
T2
Total Power Dissipation
mW
240
FREQ.
(GHz)
NF
OPT
(dB)
G
A
(dB)
Γ
OPT
MAG
ANG
Rn/50
1
0.50
23.88
.84
12
.69
2
0.55
21.78
.76
25
.63
4
0.60
18.93
.70
45
.49
6
0.80
16.28
.64
65
.41
8
1.00
14.67
.60
83
.36
10
1.30
12.97
.56
99
.32
12
1.60
11.58
.52
114
.27
14
1.90
10.24
.49
125
.23
16
2.30
9.42
.48
135
.20
18
2.60
8.39
.47
145
.18
Notes:
1. Operation in excess of any one of these parameters may result in
permanent damage.
2. With chip mounted on a copper heat sink.
TYPICAL PERFORMANCE CURVES
(TA = 25
°
C)
N
A
A
NOISE FIGURE AND ASSOCIATED
GAIN vs. DRAIN CURRENT
DC PERFORMANCE
Drain Voltage, V
DS
(V)
D
D
DRAIN CURRENT vs.
GATE VOLTAGE (TYP)
V
DS
= 3 V, V
P
= -0.8 V
Gate to Source Voltage, V
GS
(V)
D
D
T
T
(
Ambient Temperature, T
A
(
°
C)
Drain Current, I
DS
(mA)
POWER DERATING CURVE
Note:
1. Noise parameters include bond wires:
Gate:
2 wires total, 1 per bond pad, 0.0139" long each wire.
Drain:
2 wires total, 1 per bond pad, 0.0115" long each wire.
Sources:
4 wires total, 2 per side, 0.0066" long each wire.
Wire:
0.0007" diameter, gold.
(V
DS
= 3.0, I
DS
= 10 mA)
TYPICAL NOISE PARAMETERS
1
NE76000
0 25 50 75 100 125 150 175 200
300
250
200
150
100
50
0
Infinite
Heat sink
-3 -2.5 -2 -1.5 -1 -0.5 0 0.5
35
30
25
20
15
10
5
0
G
A
NF
2.5
2
1.5
0
0 5 10 15 20 25
5
10
15
35
25
30
20
15
10
5
0
0 0.5 1 1.5 2 2.5 3 3.5 4
V
GS
= 0 V
V
GS
= -.
V
GS
= -.4 V
V
GS
= -.6 V
2 V
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| NE76084S | 制造商:NEC 制造商全稱:NEC 功能描述:LOW NOISE L TO Ku BAND GaAs MESFET |
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