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參數(shù)資料
| 型號(hào)： | NE722S01-T1B1 |
| 廠商： | NEC Corp. |
| 英文描述： | NECs C TO X BAND N-CHANNEL GaAs MES FET |
| 中文描述： | 鄰舍C至X波段N溝道砷化鎵場(chǎng)效應(yīng)晶體管 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 128K |
| 代理商： | NE722S01-T1B1 |
NEC's C TO X BAND
N-CHANNEL GaAs MES FET
NE722S01
FEATURES
HIGH POWER GAIN:
GS = 6 dB TYP at f = 12 GHz
OUTPUT POWER
(at 1 dB compression)
:
15 dB TYP at f = 12 GHz
LOW NOISE/HIGH GAIN:
NF = 0.9 dB TYP, Ga = 12 dB TYP at f = 4 GHz
GATE LENGTH:
L
G
= 0.8
μ
m (recessed gate)
GATE WIDTH:
W
G
= 400
μ
m
PART NUMBER
PACKAGE OUTLINE
NE722S01
S01
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
I
GSO
Gate to Source Leak Current, V
GS
= -5 V
uA
–
1.0
10
I
DSS
Saturated Drain Current, V
DS
= 3 V, V
GS
= 0 V
mA
60
90
120
V
GS
Gate to Source Cutoff Voltage, V
DS
= 3 V, I
D
= 100
μ
A
V
-0.5
–
-4.0
g
m
Transconductance, V
DS
= 3 V, I
DS
= 30 mA
mS
20
45
–
G
S
Power Gain, V
DS
= 3 V, I
DS
= 30 mA, f = 12 GHz
dB
–
6
–
P1dB
Output Power at 1 dB Gain Compression Point at
V
DS
= 3 V, I
DS
= 30 mA, f = 12 GHz
dBm
15.0
NF
Noise Figure, V
DS
= 3 V, I
DS
= 10 mA, f = 4 GHz
dB
–
0.9
–
Ga
Associated Gain, V
DS
= 3 V, I
DS
= 10 mA, f = 4 GHz
dB
–
12
_
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C)
PACKAGE OUTLINE SO1
1. Source
2. Drain
3. Source
4. Gate
OUTLINE DIMENSION
(Units in mm)
2.0 ± 0.2
0.65 TYP
20±02
4
2
3
1
0.5
TYP
2.0±0.2
1.9 ± 0.2
1.6
0.125 ± 0.05
0.4 MAX
4.0 ± 0.2
1.5 MAX
P
APPLICATIONS
C to X band low noise amplifiers
C to X band oscillators
DESCRIPTION
NEC's NE722S01 is a low cost GaAs MESFET suitable for
both amplifier and oscillator applications through X-band.
The device features a 0.8 micron recessed gate, triple
epitaxial technology and is fabricated using ion implantation
for improved RF and DC performance and uniformity. This
device's low phase noise and high fT makes it a excellent
choice for oscillator applications on a digital LNB (Low
Noise Block). The NE722S01 is housed in a low cost plastic
package which is available in Tape and Reel.
NEC's stringent quality assurance and test procedures
ensure the highest reliability performance.
California Eastern Laboratories
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