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參數(shù)資料
| 型號： | NE722S01-T1B1 |
| 廠商： | NEC Corp. |
| 英文描述： | NECs C TO X BAND N-CHANNEL GaAs MES FET |
| 中文描述： | 鄰舍C至X波段N溝道砷化鎵場效應(yīng)晶體管 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 128K |
| 代理商： | NE722S01-T1B1 |
PART NUMBER
SUPPLY FORM
MARKING
NE722S01-T1
Tape & Reel 1000 pcs/reel
NE722S01-T1B
1
Tape & Reel 4000 pcs/reel
Note:
1. Available if quantity is over 100k per month
ORDERING INFORMATION
RECOMMENDED
OPERATING CONDITIONS
(T
A
= 25
°
C)
PART NUMBER
SYMBOLS
PARAMETERS
V
DS
Drain to Source Voltage
I
DS
Drain Current
NE722S01
UNITS MIN TYP MAX
V
mA
3
4
30
40
SYMBOLS
PARAMETERS
UNITS
RATINGS
V
DS
Drain to Source Voltage
V
5.0
V
GS
Gate to Source Voltage
V
-5.0
V
GD
Gate to Drain Voltage
V
-6.0
I
DS
Drain Current
mA
I
DSS
P
T
Total Power Dissipation
mW
250
P
IN
Input Power
mW
40
T
CH
Channel Temperature
°
C
125
T
STG
Storage Temperature
°
C
-65 to +125
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25
°
C)
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
NE722S01
D
D
TYPICAL PERFORMANCE CURVES
(T
A
= 25
°
C)
D
D
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
Drain to Source Voltage, V
DS
(V)
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
Gate to Source Voltage, V
GS
(V)
60
40
80
20
0
-4.0
-2.0
V
DS
= 3.0 V
0
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
T
T
)
M
M
F
2
S
|
2
500
400
300
200
100
0
50
100
150
200
250
V
DS
= 3 V
I
DS
= 10 mA
12
16
20
0
8
4
1
5
10 14 20
50
MSG.
|S
21S
|
2
0.5
MAG.
MAG =
|S
21
|
|S
12
K - 1
).
(
K ±
When K
≤
1, |
MSG =
|S
12
|
2 |S
12
S
21
= S
11
S
22
- S
21
S
12
,
|S
21
|
, K =
1 + |
| - |S
11
||
22
|
2
2
Ambient Temperature, T
A
(
°
C)
Frequency, f
(GHz)
MAXIMUM AVAILABLE GAIN, FORWARD
INSERTION GAIN vs. FREQUENCY
60
80
40
20
100
0
4
3
5
2
1
-0.5 V
-1.0 V
-2.0 V
V
GS
= 0.0 V
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
Note:
1. Gain Calculation:
MAG =
|S
21
|
|S
12
|
K - 1
).
(
K
±
= S
11
S
22
- S
21
S
12
,
When K
≤
1, MAG is undefined and MSG values are used. MSG =
|S
21
|
|S
12
|
, K =
1 + |
| - |S
11
| - |S
22
|
2 |S
12
S
21
|
2
P
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