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參數(shù)資料
| 型號： | NE42484C |
| 廠商： | NEC Corp. |
| 英文描述： | Super Low Noise Amplifier N-Channel HJ-FET(超低噪聲放大器N溝道結(jié)型場效應(yīng)管) |
| 中文描述： | 超低噪聲放大器N溝道黃建忠場效應(yīng)管（超低噪聲放大器?溝道結(jié)型場效應(yīng)管） |
| 文件頁數(shù)： | 9/10頁 |
| 文件大?。?/td> | 55K |
| 代理商： | NE42484C |
NE42484C
9
RECOMMENDED SOLDERING CONDITIONS
The following conditions (see table below) must be met when soldering this product.
Please consult with our sales offices in case other soldering process is used, or in case soldering is done under
different conditions.
<TYPES OF SURFACE MOUNT DEVICE>
For more details, refer to our document “SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL”
(C10535EJ7V0IF00).
Soldering process
Soldering conditions
Symbol
Infrared ray reflow
Peak package’s surface temperature: 230 C or below,
Reflow time: 30 seconds or below (210 C or higher),
Number of reflow process: 1, Exposure limit
Note
: None
IR30-00
Partial heating method
Terminal temperature: 230 C or below,
Flow time: 10 seconds or below,
Exposure limit
Note
: None
Note
Exposure limit before soldering after dry-pack package is opened.
Storage conditions: 25 C and relative humidity at 65 % or less.
Caution Do not apply more than a single process at once, except for “Partial heating method”.
PRECAUTION
Avoid high static voltage and electric fields, because this device is Hetero Junction field effect
transistor with shottky barrier gate.
Caution
The Great Care must be taken in dealing with the devices in this guide.
The reason is that the material of the devices is GaAs (Gallium Arsenide), which is
designated as harmful substance according to the law concerned.
Keep the Japanese law concerned and so on, especially in case of removal.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NE425S01 | C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
| NE425S01-T1 | C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
| NE425S01-T1B | C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
| NE429M01 | C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
| NE429M01-T1 | C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NE425S01 | 功能描述:射頻GaAs晶體管 Super Lo Noise HJFET RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| NE425S01_98 | 制造商:NEC 制造商全稱:NEC 功能描述:C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
| NE425S01-T1 | 制造商:NEC 制造商全稱:NEC 功能描述:C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
| NE425S01-T1B | 功能描述:射頻GaAs晶體管 Super Lo Noise HJFET RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| NE425S01-T1B-A | 制造商:California Eastern Laboratories (CEL) 功能描述:Trans JFET N-CH 4V 90mA 4-Pin Case S01 T/R |
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