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參數(shù)資料
| 型號： | NE429M01-T1 |
| 廠商： | NEC Corp. |
| 英文描述： | C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
| 中文描述： | C到Ku波段超低噪聲放大器N溝道黃建忠場效應管 |
| 文件頁數(shù)： | 1/12頁 |
| 文件大小： | 50K |
| 代理商： | NE429M01-T1 |
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE429M01
C to Ku BAND SUPER LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET
Document No. P12254EJ3V0DS00 (3rd edition)
Date Published November 1999 N CP(K)
Printed in Japan
DATA SHEET
1997, 1999
The mark
shows major revised points.
DESCRIPTION
The NE429M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its
excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems.
FEATURES
Super low noise figure & High associated gain
NF = 0.9 dB TYP., G
a
= 10 dB TYP. @ f = 12 GHz
6-pin super minimold package
Gate width: W
g
= 200
μ
m
ORDERING INFORMATION
Part Number
Package
Marking
Supplying Form
NE429M01-T1
6-pin super minimold
V72
Embossed tape 8 mm wide.
1, 2, 3 pins face to perforation side of the tape
Qty 3 kpcs/reel
ABSOLUTE MAXIMUM RATINGS (T
A
= +25
°
C)
Parameter
Symbol
Ratings
Unit
Drain to Source Voltage
V
DS
4.0
V
Gate to Source Voltage
V
GS
3.0
V
Drain Current
I
D
I
DSS
mA
Gate Current
I
G
100
μ
A
Total Power Dissipation
P
tot
125
mW
Channel Temperature
T
ch
125
°
C
Storage Temperature
T
stg
65 to +125
°
C
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相關代理商/技術參數(shù) |
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| NE434S01 | 制造商:NEC 制造商全稱:NEC 功能描述:C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
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| NE45 | 制造商:D&R Associates 功能描述: 制造商:CM 功能描述: |
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