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參數(shù)資料
| 型號(hào)： | NE461M02 |
| 廠商： | NEC Corp. |
| 英文描述： | NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER |
| 中文描述： | npn型外延硅晶體管高頻低失真功率放大器 |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大小： | 45K |
| 代理商： | NE461M02 |
PART NUMBER
EIAJ
1
REGISTERED NUMBER
PACKAGE OUTLINE
NE461M02
2SC5337
M02
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
I
CBO
I
EBO
h
FE2
|S
21E
|
2
NF
1
NF
2
IM
2
Collector Cutoff Current at V
CB
= 20 V, I
E
= 0
Emitter Cutoff Current at V
EB
= 2 V, I
C
= 0
DC Current Gain at V
CE
= 10 V, I
C
= 50 mA
Insertion Power Gain at V
CE
= 10 V, I
C
= 50 mA, f = 1 GHz
Noise Figure 1 at V
CE
= 10 V, I
C
= 50 mA, f = 500 MHz
3
Noise Figure 2 at V
CE
= 10 V, I
C
= 50 mA, f = 1 GHz
3
2nd Order Intermodulation Distortion
V
CE
= 10 V, I
C
= 50 mA, Rs = R
L
= 75
Pin = 105 dB
μ
V/75
, f
1
= 190 MHz
f
2
= 90 MHz, f = f
1
- f
2
3rd Order Intermodulation Distortion
V
CE
= 10 V, I
C
= 50 mA, Rs = R
L
= 75
Pin = 105 dB
μ
V/75
, f
1
= 190 MHz
f
2
= 200 MHz, f = 2 x f
1
- f
2
μ
A
μ
A
0.01
0.03
120
8.3
1.5
2.0
59.0
5.0
5.0
200
40
7.0
dB
dB
dB
dB
3.5
3.5
IM
3
dB
82.0
NE461M02
NPN EPITAXIAL SILICON
TRANSISTOR HIGH FREQUENCY
LOW DISTORTION AMPLIFIER
HIGH COLLECTOR CURRENT:
250 mA MAX
NEW HIGH GAIN POWER MINI-MOLD PACKAGE
(SOT-89 TYPE)
HIGH OUTPUT POWER AT 1 dB COMPRESSION:
27 dBm TYP at 1 GHz
HIGH IP
3
:
37 dBm TYP at 1 GHz
FEATURES
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE M02
DESCRIPTION
The NE461M02 is an NPN silicon epitaxial bipolar transistor
designed for medium power applications requiring high dy-
namic range and low intermodulation distortion. This device
offers excellent performance and reliability at low cost through
NEC's titanium, platinum, gold metallization system and direct
nitride passivation of the surface of the chip. The NE461M02
is an excellent choice for low noise amplifiers in the VHF to UHF
band and is suitable for CATV and other telecommunication
applications.
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C)
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width
≤
350
μ
s, duty cycle
≤
2 %.
3. Rs = R
L
= 50
, tuned.
PIN CONNECTIONS
E: Emitter
C: Collector
B: Base
BOTTOM VIEW
1.6
±
0.2
1.5
±
0.1
0.25
±
0.02
0.42
±
0.06
1.5
0.42
±
0.06
0
M
0.45
±
0.06
3
±
0
2
±
0
C
E
B
E
4.5
±
0.1
3.0
California Eastern Laboratories
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