- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄363247 > NE429M01-T1 (NEC Corp.) C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET PDF資料下載
參數(shù)資料
| 型號(hào)： | NE429M01-T1 |
| 廠商： | NEC Corp. |
| 英文描述： | C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
| 中文描述： | C到Ku波段超低噪聲放大器N溝道黃建忠場(chǎng)效應(yīng)管 |
| 文件頁(yè)數(shù)： | 9/12頁(yè) |
| 文件大?。?/td> | 50K |
| 代理商： | NE429M01-T1 |
Data Sheet P12254EJ3V0DS00
9
NE429M01
PRECAUTION
Avoid high static voltage and electric fields, because this device is Hetero Junction field effect transistor with
shottky barrier gate.
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered under the following recommended conditions. For soldering methods and
conditions other than those recommended below, contact your NEC sales representative.
Soldering Method
Soldering Conditions
Recommended Condition Symbol
Infrared Reflow
Package peak temperature: 235 °C or below
Time: 30 seconds or less (at 210 °C)
Count: 3, Exposure limit: None
Note
IR35-00-3
VPS
Package peak temperature: 215 °C or below
Time: 40 seconds or less (at 200 °C)
Count: 3, Exposure limit: None
Note
VP15-00-3
Wave Soldering
Soldering bath temperature: 260 °C or below
Time: 10 seconds or less
Count: 1, Exposure limit: None
Note
WS60-00-1
Partial Heating
Pin temperature: 300 °C
Time: 3 seconds or less (per side of device)
Exposure limit: None
Note
–
Note
After opening the dry pack, keep it in a place below 25 °C and 65 % RH for the allowable storage period.
Caution
Do not use different soldering methods together (except for partial heating).
For details of recommended soldering conditions for surface mounting, refer to information document
SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E).
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NE434S01-T1 | C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
| NE434S01 | Low Noise Amplifier N-Channel HJ-FET(低噪聲放大器N溝道結(jié)型場(chǎng)效應(yīng)管) |
| NE461M02 | NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER |
| NE461M02-T1 | NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER |
| NE5045 | Seven-Channel RC Decoder |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NE434S01 | 制造商:NEC 制造商全稱:NEC 功能描述:C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
| NE434S01_98 | 制造商:NEC 制造商全稱:NEC 功能描述:C BAND SUPER LOW NOISE HJ FET |
| NE434S01-T1 | 制造商:NEC 制造商全稱:NEC 功能描述:C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
| NE434S01-T1B | 功能描述:MOSFET S01 LO NO HJ FET S01 LO NO HJ FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NE45 | 制造商:D&R Associates 功能描述: 制造商:CM 功能描述: |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。