參數(shù)資料
型號(hào)： NE425S01-T1B
廠(chǎng)商： NEC Corp.
英文描述： C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
中文描述： C到Ku波段超低噪聲放大器N溝道黃建忠場(chǎng)效應(yīng)管
文件頁(yè)數(shù)： 1/12頁(yè)
文件大?。?/td> 57K
代理商： NE425S01-T1B
1996
DATA SHEET
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE425S01
C to Ku BAND SUPER LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET
DESCRIPTION
The NE425S01 is a Hetero Junction FET that utilizes the
hetero junction to create high mobility electrons. Its excellent
low noise and high associated gain make it suitable for DBS
and another commercial systems.
FEATURES
Super Low Noise Figure & High Associated Gain
NF = 0.60 dB TYP., G
a
= 12.0 dB TYP. at f = 12 GHz
Gate Length: L
g
≤
0.20
μ
m
Gate Width : W
g
= 200
μ
m
ORDERING INFORMATION
PART NUMBER
SUPPLYING FORM
MARKING
NE425S01-T1
Tape & reel 1000 pcs./reel
G
NE425S01-T1B
Tape & reel 4000 pcs./reel
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Current
Total Power Dissipation
Channel Temperature
Storage Temperature
V
DS
V
GS
I
D
I
G
P
tot
T
ch
T
stg
4.0
–3.0
I
DSS
100
165
125
V
V
mA
μ
A
mW
C
C
–65 to +125
RECOMMENDED OPERATING CONDITION (T
A
= 25 C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
Unit
Drain to Source Voltage
V
DS
2
3
V
Drain Current
I
D
10
20
mA
Input Power
P
in
0
dBm
Document No. P11161EJ3V0DS00 (3rd edition)
Date Published October 1996 N
Printed in Japan
PACKAGE DIMENSIONS
(Unit: mm)
0
2
4
0.65 TYP.
3
2
1
2.0 ±0.2
20±02
G
1.9 ±0.2
1.6
4.0 ±0.2
0.125 ±0.05
1
0.4MAX
1. Source
2. Drain
3. Source
4. Gate
相關(guān)PDF資料
PDF描述
NE429M01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
NE429M01-T1 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
NE434S01-T1 C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
NE434S01 Low Noise Amplifier N-Channel HJ-FET(低噪聲放大器N溝道結(jié)型場(chǎng)效應(yīng)管)
NE461M02 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NE425S01-T1B-A 制造商:California Eastern Laboratories (CEL) 功能描述:Trans JFET N-CH 4V 90mA 4-Pin Case S01 T/R
NE429M01 制造商:NEC 制造商全稱(chēng):NEC 功能描述:C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
NE429M01-T1 功能描述:MOSFET Super Lo Noise HJFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NE434S01 制造商:NEC 制造商全稱(chēng):NEC 功能描述:C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
NE434S01_98 制造商:NEC 制造商全稱(chēng):NEC 功能描述:C BAND SUPER LOW NOISE HJ FET
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