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參數(shù)資料
| 型號： | NE42484C |
| 廠商： | NEC Corp. |
| 英文描述： | Super Low Noise Amplifier N-Channel HJ-FET(超低噪聲放大器N溝道結(jié)型場效應(yīng)管) |
| 中文描述： | 超低噪聲放大器N溝道黃建忠場效應(yīng)管（超低噪聲放大器?溝道結(jié)型場效應(yīng)管） |
| 文件頁數(shù)： | 2/10頁 |
| 文件大?。?/td> | 55K |
| 代理商： | NE42484C |
NE42484C
2
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Gate to Source Leak Current
I
GSO
0.5
10
μ
A
V
GS
= –3 V
Saturated Drain Current
I
DSS
15
40
70
mA
V
DS
= 2 V, V
GS
= 0 V
Gate to Source Cutoff Voltage
V
GS(off)
–0.2
–0.8
–2.0
V
V
DS
= 2 V, I
D
= 100
μ
A
Transconductance
g
m
45
60
mS
V
DS
= 2 V, I
D
= 10 mA
Noise Figure
NF
0.7
1.0
dB
V
DS
= 2 V, I
D
= 10 mA,
f = 12 GHz
Associated Gain
Ga
11.0
12.0
dB
TYPICAL CHARACTERISTICS (T
A
= 25 C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
T
A
– Ambient Temperature – C
P
t
250
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
– Drain to Source Voltage – V
I
D
50
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
V
GS
– Gate to Source Voltage – V
I
D
50
–2.0
MAXIMUM AVAILABLE GAIN, FORWARD
INSERTION GAIN vs. FREQUENCY
f – Frequency – GHz
M
M
|
2
|
2
200
150
100
50
0
50
100
150
200
250
40
30
20
10
0
1
5
V
GS
= 0 V
–0.2 V
–0.4 V
–0.6 V
40
30
20
10
0
–1.0
0
V
DS
= 2 V
V
= 2 V
I
D
= 10 mA
MSG.
|S
21s
|
2
24
1
20
16
12
8
4
2
4
6
8 10
14
20
30
MAG.
2
3
4
Gain Calculations
MSG.=|S |
|S
|
21
12
K
S
S
S
S
=
|
1 |
|
2
|
|
|
|
||
|
2
112
222
12
21
MAG
S
S
K
(
K
.
|
|
|
|
=
±
)
21
12
2
1
=
S
S
S
S
11
22
21
12
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NE425S01 | C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
| NE425S01-T1 | C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
| NE425S01-T1B | C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
| NE429M01 | C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
| NE429M01-T1 | C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NE425S01 | 功能描述:射頻GaAs晶體管 Super Lo Noise HJFET RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| NE425S01_98 | 制造商:NEC 制造商全稱:NEC 功能描述:C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
| NE425S01-T1 | 制造商:NEC 制造商全稱:NEC 功能描述:C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
| NE425S01-T1B | 功能描述:射頻GaAs晶體管 Super Lo Noise HJFET RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| NE425S01-T1B-A | 制造商:California Eastern Laboratories (CEL) 功能描述:Trans JFET N-CH 4V 90mA 4-Pin Case S01 T/R |
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