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參數(shù)資料
| 型號： | NE42484C |
| 廠商： | NEC Corp. |
| 英文描述： | Super Low Noise Amplifier N-Channel HJ-FET(超低噪聲放大器N溝道結(jié)型場效應(yīng)管) |
| 中文描述： | 超低噪聲放大器N溝道黃建忠場效應(yīng)管（超低噪聲放大器?溝道結(jié)型場效應(yīng)管） |
| 文件頁數(shù)： | 1/10頁 |
| 文件大小： | 55K |
| 代理商： | NE42484C |
1993
DATA SHEET
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE42484C
C to Ku BAND SUPER LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET
DESCRIPTION
The NE42484C is a Hetero Junction FET that utilizes the
hetero junction to create high mobility electrons. Its excellent
low noise and high associated gain make it suitable for DBS,
TVRO and another commercial systems.
FEATURES
Super Low Noise Figure & High Associated Gain
NF = 0.7 dB TYP., Ga = 12.0 dB TYP. at f = 12 GHz
Gate Length : L
g
≤
0.25
μ
m
Gate Width : W
g
= 200
μ
m
ORDERING INFORMATION
PART NUMBER
SUPPLYING
FORM
LEAD LENGTH
MARKING
NE42484C-SL
STICK
L = 1.7 mm MIN.
NE42484C-T1
Tape & reel
1000 pcs./reel
L = 1.0
±
0.2 mm
K
NE42484C-T1A
Tape & reel
5000 pcs./reel
L = 1.0
±
0.2 mm
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Current
Total Power Dissipation
Channel Temperature
Storage Temperature
V
DS
V
GS
I
D
I
G
P
tot
T
ch
T
stg
4.0
–3.0
Idss
100
165
150
V
V
mA
μ
A
mW
C
C
–65 to +150
RECOMMENDED OPERATING CONDITION (T
A
= 25 C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
Unit
Drain to Source Voltage
V
DS
2
3
V
Drain Current
I
D
10
20
mA
Input Power
P
in
0
dBm
Document No. P11332EJ2V0DS00 (2nd edition)
(Previous No. TC-2432)
Date Published March 1996 P
Printed in Japan
1.78±0.2
1
1
2
L
L
3
4
0.5 TYP.
0
1
0
PACKAGE DIMENSIONS
(Unit : mm)
1.
2.
3.
4.
Source
Drain
Source
Gate
L
L
K
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NE425S01 | C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
| NE425S01-T1 | C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
| NE425S01-T1B | C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
| NE429M01 | C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
| NE429M01-T1 | C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NE425S01 | 功能描述:射頻GaAs晶體管 Super Lo Noise HJFET RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| NE425S01_98 | 制造商:NEC 制造商全稱:NEC 功能描述:C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
| NE425S01-T1 | 制造商:NEC 制造商全稱:NEC 功能描述:C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
| NE425S01-T1B | 功能描述:射頻GaAs晶體管 Super Lo Noise HJFET RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| NE425S01-T1B-A | 制造商:California Eastern Laboratories (CEL) 功能描述:Trans JFET N-CH 4V 90mA 4-Pin Case S01 T/R |
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