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參數(shù)資料
| 型號(hào)： | NE32584C-T1A |
| 廠(chǎng)商： | NEC Corp. |
| 英文描述： | C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
| 中文描述： | C到Ku波段超低噪聲放大器N溝道黃建忠場(chǎng)效應(yīng)管 |
| 文件頁(yè)數(shù)： | 1/12頁(yè) |
| 文件大?。?/td> | 73K |
| 代理商： | NE32584C-T1A |
DATA SHEET
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE32584C
C to Ku BAND SUPER LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET
1994
Document No. P12275EJ2V0DS00 (2nd edition)
(Previous No. TC-2515)
Date Published February 1997 N
Printed in Japan
DESCRIPTION
The NE32584C is a Hetero Junction FET that utilizes the
hetero junction to create high mobility electrons. Its excellent
low noise and high associated gain make it suitable for DBS,
TVRO and another commercial systems.
FEATURES
Super Low Noise Figure & High Associated Gain
NF = 0.45 dB TYP., G
a
= 12.5 dB TYP. at f = 12 GHz
Gate Length : L
g
d
0.2
P
m
Gate Width ..: W
g
= 200
P
m
ORDERING INFORMATION
SUPPLYING
FORM
NE32584C-SL
STICK
L = 1.7 mm MIN.
D
NE32584C-T1
Tape & reel
1000 pcs./reel
L = 1.0
r
0.2 mm
NE32584C-T1A
Tape & reel
5000 pcs./reel
L = 1.0
r
0.2 mm
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
q
C)
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Current
Total Power Dissipation
Channel Temperature
Storage Temperature
V
DS
V
GS
I
D
I
G
P
tot
T
ch
T
stg
4.0
–3.0
I
DSS
100
165
150
V
V
mA
P
A
mW
q
C
q
C
–65 to +150
RECOMMENDED OPERATING CONDITION (T
A
= 25
q
C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
Unit
Drain to Source Voltage
V
DS
2
3
V
Drain Current
I
D
10
20
mA
Input Power
P
in
0
dBm
MARKING
LEAD LENGTH
PART NUMBER
1.78 ±0.2
1
1
2
L
L
3
4
0.5 TYP.
0
1
0
PACKAGE DIMENSIONS
(Unit: mm)
1.
2.
3.
4.
Source
Drain
Source
Gate
L
L
D
相關(guān)PDF資料 |
PDF描述 |
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| NE325S01 | C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
| NE325S01-T1B | C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
| NE334S01-T1 | C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
| NE334S01-T1B | LED 3MM QUAD YEL/GRN BICLR PCMNT |
| NE334S01 | Low Noise Amplifier N-Channeal HJ-FET(低噪聲放大器N溝道 JFET) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NE32584C-T1A-A | 制造商:California Eastern Laboratories (CEL) 功能描述:ULTRA LOW NOISE PSEUDOMORPHIC |
| NE325S01 | 功能描述:射頻GaAs晶體管 Super Lo Noise HJFET RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類(lèi)型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| NE325S01_02 | 制造商:NEC 制造商全稱(chēng):NEC 功能描述:C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
| NE325S01-T1 | 制造商:NEC 制造商全稱(chēng):NEC 功能描述:C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
| NE325S01-T1B | 功能描述:射頻GaAs晶體管 Super Lo Noise HJFET RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類(lèi)型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
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