- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄363246 > NE334S01-T1 (NEC Corp.) C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET PDF資料下載
參數(shù)資料
| 型號： | NE334S01-T1 |
| 廠商： | NEC Corp. |
| 英文描述： | C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
| 中文描述： | C波段超低噪聲放大器N溝道黃建忠場效應管 |
| 文件頁數(shù)： | 1/12頁 |
| 文件大小： | 74K |
| 代理商： | NE334S01-T1 |
DATA SHEET
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE334S01
C BAND SUPER LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET
1996
Document No. P11139EJ3V0DS00 (3rd edition)
Date Published October 1996 P
Printed in Japan
DESCRIPTION
The NE334S01 is a Herero Junction FET that utilizes the
hetero junction to create high mobility electrons. Its excellent
low noise and high associated gain make it suitable for TVRO
and another commercial systems.
FEATURES
Super Low Noise Figure & High Associated Gain
NF = 0.25 dB TYP., G
a
= 16.0 dB TYP. at f = 4 GHz
Gate Width: W
g
= 280
m
m
ORDERING INFORMATION
PART NUMBER
SUPPLYING FORM
MARKING
NE334S01-T1
Tape & reel 1000 pcs./reel
C
NE334S01-T1B
Tape & reel 4000 pcs./reel
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Total Power Dissipation
Channel Temperature
Storage Temperature
V
DS
V
GS
I
D
P
tot
T
ch
T
stg
4.0
–3.0
I
DSS
300
125
V
V
mA
mW
°
C
°
C
–65 to +125
RECOMMENDED OPERATING CONDITION (T
A
= 25
°
C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
Unit
Drain to Source Voltage
V
DS
2
2.5
V
Drain Current
I
D
15
20
mA
Input Power
P
in
0
dBm
1.9 ± 0.2
1.6
0.4 MAX.
0.125 ± 0.05
4.0 ± 0.2
1
0
2
20±02
2
4
3
0.65 TYP.
1
C
2.0 ± 0.2
1. Source
2. Drain
3. Source
4. Gate
PACKAGE DIMENSIONS
(Unit: mm)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NE334S01-T1B | LED 3MM QUAD YEL/GRN BICLR PCMNT |
| NE334S01 | Low Noise Amplifier N-Channeal HJ-FET(低噪聲放大器N溝道 JFET) |
| NE38018 | L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET |
| NE38018-T1 | L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET |
| NE38018-T2 | L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NE334S01-T1-A | 功能描述:MOSFET Low Noise HJ FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NE334S01-T1B | 制造商:NEC 制造商全稱:NEC 功能描述:C BAND SUPER LOW NOISE HJ FET |
| NE3390-44.736 | 制造商:CRYSTEKCRYSTAL 制造商全稱:Crystek Corporation 功能描述:Clock Oscillator 14 Pin Dip, 3.3V, HCMOS |
| NE3391-44.736 | 制造商:CRYSTEKCRYSTAL 制造商全稱:Crystek Corporation 功能描述:Clock Oscillator 14 Pin Dip, 3.3V, HCMOS |
| NE3392-44.736 | 制造商:CRYSTEKCRYSTAL 制造商全稱:Crystek Corporation 功能描述:Clock Oscillator 14 Pin Dip, 3.3V, HCMOS |
發(fā)布緊急采購，3分鐘左右您將得到回復。