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參數(shù)資料
| 型號： | NE334S01 |
| 廠商： | NEC Corp. |
| 英文描述： | Low Noise Amplifier N-Channeal HJ-FET(低噪聲放大器N溝道 JFET) |
| 中文描述： | 低噪聲放大器? - Channeal黃建忠場效應管（低噪聲放大器?溝道結型場效應管） |
| 文件頁數(shù)： | 1/12頁 |
| 文件大小： | 65K |
| 代理商： | NE334S01 |
DATA SHEET
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE334S01
C BAND SUPER LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET
1996
Document No. P11139EJ3V0DS00 (3rd edition)
Date Published October 1996 P
Printed in Japan
DESCRIPTION
The NE334S01 is a Herero Junction FET that utilizes the
hetero junction to create high mobility electrons. Its excellent
low noise and high associated gain make it suitable for TVRO
and another commercial systems.
FEATURES
Super Low Noise Figure & High Associated Gain
NF = 0.25 dB TYP., G
a
= 16.0 dB TYP. at f = 4 GHz
Gate Width: W
g
= 280
m
m
ORDERING INFORMATION
PART NUMBER
SUPPLYING FORM
MARKING
NE334S01-T1
Tape & reel 1000 pcs./reel
C
NE334S01-T1B
Tape & reel 4000 pcs./reel
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Total Power Dissipation
Channel Temperature
Storage Temperature
V
DS
V
GS
I
D
P
tot
T
ch
T
stg
4.0
–3.0
I
DSS
300
125
V
V
mA
mW
°
C
°
C
–65 to +125
RECOMMENDED OPERATING CONDITION (T
A
= 25
°
C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
Unit
Drain to Source Voltage
V
DS
2
2.5
V
Drain Current
I
D
15
20
mA
Input Power
P
in
0
dBm
1.9 ± 0.2
1.6
0.4 MAX.
0.125 ± 0.05
4.0 ± 0.2
1
0
2
20±02
2
4
3
0.65 TYP.
1
C
2.0 ± 0.2
1. Source
2. Drain
3. Source
4. Gate
PACKAGE DIMENSIONS
(Unit: mm)
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| NE38018-T1 | L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET |
| NE38018-T2 | L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET |
| NE4210S01 | Low Noise Amplifier N-Channel HJ-FET(低噪聲N溝道結型場效應管) |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| NE334S01_00 | 制造商:NEC 制造商全稱:NEC 功能描述:C BAND SUPER LOW NOISE HJ FET |
| NE334S01-A | 功能描述:MOSFET Low Noise HJ FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NE334S01-T1 | 功能描述:射頻GaAs晶體管 Low Noise HJ FET RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
| NE334S01-T1-A | 功能描述:MOSFET Low Noise HJ FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NE334S01-T1B | 制造商:NEC 制造商全稱:NEC 功能描述:C BAND SUPER LOW NOISE HJ FET |
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