參數(shù)資料
型號(hào)： NE334S01-T1B
廠商： NEC Corp.
英文描述： LED 3MM QUAD YEL/GRN BICLR PCMNT
中文描述： C波段超低噪聲放大器N溝道黃建忠場(chǎng)效應(yīng)管
文件頁(yè)數(shù)： 1/12頁(yè)
文件大?。?/td> 74K
代理商： NE334S01-T1B
DATA SHEET
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE334S01
C BAND SUPER LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET
1996
Document No. P11139EJ3V0DS00 (3rd edition)
Date Published October 1996 P
Printed in Japan
DESCRIPTION
The NE334S01 is a Herero Junction FET that utilizes the
hetero junction to create high mobility electrons. Its excellent
low noise and high associated gain make it suitable for TVRO
and another commercial systems.
FEATURES
Super Low Noise Figure & High Associated Gain
NF = 0.25 dB TYP., G
a
= 16.0 dB TYP. at f = 4 GHz
Gate Width: W
g
= 280
m
m
ORDERING INFORMATION
PART NUMBER
SUPPLYING FORM
MARKING
NE334S01-T1
Tape & reel 1000 pcs./reel
C
NE334S01-T1B
Tape & reel 4000 pcs./reel
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Total Power Dissipation
Channel Temperature
Storage Temperature
V
DS
V
GS
I
D
P
tot
T
ch
T
stg
4.0
–3.0
I
DSS
300
125
V
V
mA
mW
°
C
°
C
–65 to +125
RECOMMENDED OPERATING CONDITION (T
A
= 25
°
C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
Unit
Drain to Source Voltage
V
DS
2
2.5
V
Drain Current
I
D
15
20
mA
Input Power
P
in
0
dBm
1.9 ± 0.2
1.6
0.4 MAX.
0.125 ± 0.05
4.0 ± 0.2
1
0
2
20±02
2
4
3
0.65 TYP.
1
C
2.0 ± 0.2
1. Source
2. Drain
3. Source
4. Gate
PACKAGE DIMENSIONS
(Unit: mm)
相關(guān)PDF資料
PDF描述
NE334S01 Low Noise Amplifier N-Channeal HJ-FET(低噪聲放大器N溝道 JFET)
NE38018 L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET
NE38018-T1 L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET
NE38018-T2 L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET
NE4210S01 Low Noise Amplifier N-Channel HJ-FET(低噪聲N溝道結(jié)型場(chǎng)效應(yīng)管)
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