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參數(shù)資料
| 型號： | NE325S01 |
| 廠商： | NEC Corp. |
| 英文描述： | C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
| 中文描述： | C到Ku波段超低噪聲放大器N溝道黃建忠場效應(yīng)管 |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 60K |
| 代理商： | NE325S01 |
1996
DATA SHEET
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE325S01
C to Ku BAND SUPER LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET
DESCRIPTION
The NE325S01 is a Hetero Junction FET that utilizes the
hetero junction to create high mobility electrons. Its excellent
low noise and high associated gain make it suitable for DBS
and another commercial systems.
FEATURES
Super Low Noise Figure & High Associated Gain
NF = 0.45 dB TYP., G
a
= 12.5 dB TYP. at f = 12 GHz
Gate Length: L
g
≤
0.20
μ
m
Gate Width : W
g
= 200
μ
m
ORDERING INFORMATION
PART NUMBER
SUPPLYING FORM
MARKING
NE325S01-T1
Tape & reel 1000 pcs./reel
D
NE325S01-T1B
Tape & reel 4000 pcs./reel
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Current
Total Power Dissipation
Channel Temperature
Storage Temperature
V
DS
V
GS
I
D
I
G
P
tot
T
ch
T
stg
4.0
–3.0
I
DSS
100
165
125
V
V
mA
μ
A
mW
C
C
–65 to +125
RECOMMENDED OPERATING CONDITION (T
A
= 25 C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
Unit
Drain to Source Voltage
V
DS
2
3
V
Drain Current
I
D
10
20
mA
Input Power
P
in
0
dBm
Document No. P11138EJ3V0DS00 (3rd edition)
Date Published October 1996 N
Printed in Japan
PACKAGE DIMENSIONS
(Unit: mm)
0
2
4
0.65 TYP.
3
2
1
2.0 ±0.2
20±02
D
1.9 ±0.2
1.6
4.0 ±0.2
0.125 ±0.05
1
0.4MAX
1. Source
2. Drain
3. Source
4. Gate
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NE325S01-T1B | C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
| NE334S01-T1 | C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
| NE334S01-T1B | LED 3MM QUAD YEL/GRN BICLR PCMNT |
| NE334S01 | Low Noise Amplifier N-Channeal HJ-FET(低噪聲放大器N溝道 JFET) |
| NE38018 | L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NE325S01_02 | 制造商:NEC 制造商全稱:NEC 功能描述:C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
| NE325S01-T1 | 制造商:NEC 制造商全稱:NEC 功能描述:C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
| NE325S01-T1B | 功能描述:射頻GaAs晶體管 Super Lo Noise HJFET RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| NE325S01-T1B-A | 制造商:California Eastern Laboratories (CEL) 功能描述:Trans JFET N-CH 4V 90mA AlGaAs HJFET T/R 制造商:California Eastern Laboratories (CEL) 功能描述:Trans JFET N-CH 4V 90mA T/R |
| NE32684A | 制造商:NEC 制造商全稱:NEC 功能描述:ULTRA LOW NOISE PSEUDOMORPHIC HJ FET |
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