參數(shù)資料
型號(hào)： NDS9956A
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi)： JFETs
英文描述： Dual N-Channel Enhancement Mode Field Effect Transistor（3.7A，30V，0.08Ω）(雙N溝道增強(qiáng)型場(chǎng)效應(yīng)管（漏電流3.7A, 漏源電壓30V，導(dǎo)通電阻0.08Ω）)
中文描述： 3.7 A, 30 V, 0.08 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝： SOIC-8
文件頁(yè)數(shù)： 6/10頁(yè)
文件大?。?/td> 341K
代理商： NDS9956A
NDS9956A.SAM
Typical Thermal Characteristics
0
0.1
0.2
0.3
0.4
2
0.5
1
2
3
4
5
2oz COPPER MOUNTING PAD AREA (in )
I
D
1c
1b
1a
4.5"x5" FR-4 Board
o
T = 25 C
Still Air
V = 10V
Figure 13. Maximum Steady- State Drain
Current versus Copper Mounting Pad
Area.
0.1
0.2
0.5
V , DRAIN-SOURCE VOLTAGE (V)
1
2
5
10
30
50
0.01
0.03
0.1
0.3
1
3
10
30
I
D
DC
1s
10s
10ms
100ms
1ms
RDS(ON) LIMIT
100us
V = 10V
SINGLE PULSE
R = See Note 1c
T = 25°C
Figure 14. Maximum Safe Operating Area.
0
0.2
2oz COPPER MOUNTING PAD AREA (in )
0.4
0.6
0.8
2
1
0.5
1
1.5
2
2.5
S
1c
1b
4.5"x5" FR-4 Board
o
T = 25 C
Still Air
Power for Single Operation
Total Power for Dual Operation
1a
Figure 12. SO-8 Dual Package Maximum
Steady-State Power Dissipation versus
Copper Mounting Pad Area.
0.0001
0.001
0.01
0.1
t , TIME (sec)
1
1
10
100
300
0.001
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
T
r
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Duty Cycle, D = t / t
2
R (t) = r(t) * R
R = See Note 1c
T - T = P * R (t)
P(pk)
t
1
t
2
Figure 15. Transient Thermal Response Curve
.
Note: Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change
depending on the circuit board design.
相關(guān)PDF資料
PDF描述
NDS9956 Dual N-Channel Enhancement Mode Field Effect Transistor
NDS9957 Dual N-Channel Enhancement Mode Field Effect Transistor
NDS9958 Dual N & P-Channel Enhancement Mode Field Effect Transistor
NDS9959 Dual N-Channel Enhancement Mode Field Effect Transistor（2.0A，50V，0.3Ω）(雙N溝道增強(qiáng)型場(chǎng)效應(yīng)管（漏電流2.0A, 漏源電壓50V，導(dǎo)通電阻0.3Ω）)
NDT014L N-Channel Logic Level Enhancement Mode Field Effect Transistor（2.8A，60V，0.2Ω）(N溝道邏輯增強(qiáng)型場(chǎng)效應(yīng)管（漏電流2.8A, 漏源電壓60V，導(dǎo)通電阻0.2Ω）)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NDS9956A 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL NN LOGIC SO-8
NDS9956A_Q 功能描述:MOSFET Dual N-Ch FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDS9956ADKR-ND 制造商:Fairchild Semiconductor Corporation 功能描述:
NDS9957 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDS9958 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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