參數(shù)資料
型號(hào)： NDS9956A
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi)： JFETs
英文描述： Dual N-Channel Enhancement Mode Field Effect Transistor（3.7A，30V，0.08Ω）(雙N溝道增強(qiáng)型場(chǎng)效應(yīng)管（漏電流3.7A, 漏源電壓30V，導(dǎo)通電阻0.08Ω）)
中文描述： 3.7 A, 30 V, 0.08 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝： SOIC-8
文件頁(yè)數(shù)： 2/10頁(yè)
文件大小： 341K
代理商： NDS9956A
Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 μA
30
V
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 24 V, V
GS
= 0 V
2
μA
T
J
= 55°C
25
μA
I
GSSF
Gate - Body Leakage, Forward
V
GS
= 20 V, V
DS
= 0 V
100
nA
I
GSSR
ON CHARACTERISTICS
(Note 2)
Gate - Body Leakage, Reverse
V
GS
= -20 V, V
DS
= 0 V
-100
nA
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 μA
1
1.7
2.8
V
T
J
= 125°C
0.7
1.2
2.2
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= 10 V, I
D
= 2.2 A
0.06
0.08
T
J
= 125°C
0.08
0.13
V
GS
= 4.5 V, I
D
= 1.0 A
0.08
0.11
T
J
= 125°C
0.11
0.18
I
D(on)
On-State Drain Current
V
GS
= 10 V, V
DS
= 10 V
V
GS
= 4.5 V, V
DS
= 10 V
V
DS
= 15 V, I
D
= 3.7 A
15
A
3.5
g
FS
DYNAMIC CHARACTERISTICS
Forward Transconductance
6
S
C
iss
C
oss
C
rss
SWITCHING CHARACTERISTICS
(Note 2)
Input Capacitance
V
= 10 V, V
GS
= 0 V,
f = 1.0 MHz
320
pF
Output Capacitance
225
pF
Reverse Transfer Capacitance
85
pF
t
D(on)
t
r
t
D(off)
t
f
Q
g
Q
gs
Q
gd
Turn - On Delay Time
V
DD
= 10 V, I
D
= 1 A,
V
GEN
= 10 V, R
GEN
= 6
10
20
ns
Turn - On Rise Time
13
20
ns
Turn - Off Delay Time
21
50
ns
Turn - Off Fall Time
5
50
ns
Total Gate Charge
V
= 10 V,
I
D
= 3.7 A, V
GS
= 10 V
9.5
27
nC
Gate-Source Charge
1.5
nC
Gate-Drain Charge
3.3
nC
NDS9956A.SAM
相關(guān)PDF資料
PDF描述
NDS9956 Dual N-Channel Enhancement Mode Field Effect Transistor
NDS9957 Dual N-Channel Enhancement Mode Field Effect Transistor
NDS9958 Dual N & P-Channel Enhancement Mode Field Effect Transistor
NDS9959 Dual N-Channel Enhancement Mode Field Effect Transistor（2.0A，50V，0.3Ω）(雙N溝道增強(qiáng)型場(chǎng)效應(yīng)管（漏電流2.0A, 漏源電壓50V，導(dǎo)通電阻0.3Ω）)
NDT014L N-Channel Logic Level Enhancement Mode Field Effect Transistor（2.8A，60V，0.2Ω）(N溝道邏輯增強(qiáng)型場(chǎng)效應(yīng)管（漏電流2.8A, 漏源電壓60V，導(dǎo)通電阻0.2Ω）)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NDS9956A 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL NN LOGIC SO-8
NDS9956A_Q 功能描述:MOSFET Dual N-Ch FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDS9956ADKR-ND 制造商:Fairchild Semiconductor Corporation 功能描述:
NDS9957 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDS9958 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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