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參數(shù)資料
| 型號(hào)： | NDS9956 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | Dual N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 雙N溝道增強(qiáng)型場效應(yīng)晶體管 |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 341K |
| 代理商： | NDS9956 |
February 1996
NDS9956A
Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
________________________________________________________________________________
Absolute Maximum Ratings
Symbol
Parameter
T
A
= 25°C unless otherwise noted
NDS9956A
Units
V
DSS
Drain-Source Voltage
30
V
V
GSS
Gate-Source Voltage
± 20
V
I
D
Drain Current - Continuous
(Note 1a)
± 3.7
A
- Pulsed
± 15
P
D
Power Dissipation for Dual Operation
2
W
Power Dissipation for Single Operation
(Note 1a)
1.6
(Note 1b)
1
(Note 1c)
0.9
T
J
,T
STG
Operating and Storage Temperature Range
-55 to 150
°C
THERMAL CHARACTERISTICS
R
θ
JA
R
θ
JC
Thermal Resistance, Junction-to-Ambient
(Note 1a)
78
°C/W
Thermal Resistance, Junction-to-Case
(Note 1)
40
°C/W
NDS9956A.SAM
1
5
6
7
8
4
3
2
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high
cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance,
provide superior switching performance, and withstand high
energy pulses in the avalanche and commutation modes.
These devices are particularly suited for low voltage
applications such as DC/DC conversion and DC motor
control where fast switching, low in-line power loss, and
resistance to transients are needed.
3.7A, 30V. R
DS(ON)
= 0.08
@ V
GS
= 10V
High density cell design for extremely low R
DS(ON)
.
High power and current handling capability in a widely used
surface mount package.
Dual MOSFET in surface mount package.
1997 Fairchild Semiconductor Corporation
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| NDS9959 | Dual N-Channel Enhancement Mode Field Effect Transistor（2.0A，50V，0.3Ω）(雙N溝道增強(qiáng)型場效應(yīng)管（漏電流2.0A, 漏源電壓50V，導(dǎo)通電阻0.3Ω）) |
| NDT014L | N-Channel Logic Level Enhancement Mode Field Effect Transistor（2.8A，60V，0.2Ω）(N溝道邏輯增強(qiáng)型場效應(yīng)管（漏電流2.8A, 漏源電壓60V，導(dǎo)通電阻0.2Ω）) |
| NDT014 | N-Channel Enhancement Mode Field Effect Transistor（2.7A，60V，0.2Ω）(N溝道增強(qiáng)型場效應(yīng)管（漏電流2.7A, 漏源電壓60V，導(dǎo)通電阻0.2Ω）) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NDS9956A | 功能描述:MOSFET Dual N-Ch FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDS9956A | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL NN LOGIC SO-8 |
| NDS9956A_Q | 功能描述:MOSFET Dual N-Ch FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDS9956ADKR-ND | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| NDS9957 | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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