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參數(shù)資料
| 型號(hào)： | NDS9956A |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | Dual N-Channel Enhancement Mode Field Effect Transistor（3.7A，30V，0.08Ω）(雙N溝道增強(qiáng)型場(chǎng)效應(yīng)管（漏電流3.7A, 漏源電壓30V，導(dǎo)通電阻0.08Ω）) |
| 中文描述： | 3.7 A, 30 V, 0.08 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SOIC-8 |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 341K |
| 代理商： | NDS9956A |
Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
V
SD
t
rr
Maximum Continuous Drain-Source Diode Forward Current
1.2
A
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 1.25 A
(Note 2)
V
GS
= 0 V, I
F
= 1.25 A, dI
F
/dt = 100 A/μs
0.8
1.3
V
Reverse Recovery Time
100
ns
Notes:
1. R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
θ
JC
is guaranteed by
design while R
θ
CA
is determined by the user's board design.
P
D
(
t
) =
T
J
T
A
R
θ
J A
(
t
)
=
T
J
T
A
R
θ
J C
+
R
θ
CA
(
t
)
=
I
D
2
(
t
) ×
R
DS
(
ON
)
T
J
Typical R
θ
JA
for single device operation using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:
a. 78
o
C/W when mounted on a 0.5 in
2
pad of 2oz cpper.
b. 125
o
C/W when mounted on a 0.02 in
2
pad of 2oz cpper.
c. 135
o
C/W when mounted on a 0.003 in
2
pad of 2oz cpper.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%.
NDS9956A.SAM
1a
1b
1c
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NDS9956 | Dual N-Channel Enhancement Mode Field Effect Transistor |
| NDS9957 | Dual N-Channel Enhancement Mode Field Effect Transistor |
| NDS9958 | Dual N & P-Channel Enhancement Mode Field Effect Transistor |
| NDS9959 | Dual N-Channel Enhancement Mode Field Effect Transistor（2.0A，50V，0.3Ω）(雙N溝道增強(qiáng)型場(chǎng)效應(yīng)管（漏電流2.0A, 漏源電壓50V，導(dǎo)通電阻0.3Ω）) |
| NDT014L | N-Channel Logic Level Enhancement Mode Field Effect Transistor（2.8A，60V，0.2Ω）(N溝道邏輯增強(qiáng)型場(chǎng)效應(yīng)管（漏電流2.8A, 漏源電壓60V，導(dǎo)通電阻0.2Ω）) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NDS9956A | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL NN LOGIC SO-8 |
| NDS9956A_Q | 功能描述:MOSFET Dual N-Ch FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDS9956ADKR-ND | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| NDS9957 | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDS9958 | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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