參數資料
型號: NDS9936
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: Dual N-Channel Enhancement Mode Field Effect Transistor
中文描述: 5 A, 30 V, 0.05 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝: SO-8
文件頁數: 6/10頁
文件大?。?/td> 343K
代理商: NDS9936
NDS9936.SAM
1
2
3
5
10
20
30
0.01
0.03
0.1
0.3
1
3
10
30
V , DRAIN-SOURCE VOLTAGE (V)
I
D
V = 10V
SINGLE PULSE
T = 25°C
1ms
10ms
100ms
10s
Figure 13. Transconductance Variation with Drain
Current and Temperature.
Figure 14. Maximum Safe Operating Area.
Typical Electrical Characteristics
(continued)
0
2
4
6
8
10
0
2
4
6
8
10
12
I , DRAIN CURRENT (A)
g
TJ
25°C
F
V = 10V
125°C
0.0001
0.001
0.01
0.1
t , TIME (sec)
1
1
10
100
300
0.001
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
T
r
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Duty Cycle, D = t / t
2
R (t) = r(t) * R
R = See Note 1c
T - T = P * R (t)
P(pk)
t
1
t
2
Figure 15. Transient Thermal Response Curve
.
Note: Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change
depending on the circuit board design.
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