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參數(shù)資料
| 型號： | NDS9936 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | Dual N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 5 A, 30 V, 0.05 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SO-8 |
| 文件頁數(shù)： | 2/10頁 |
| 文件大?。?/td> | 343K |
| 代理商： | NDS9936 |
Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 μA
30
V
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 24 V, V
GS
= 0 V
2
μA
T
J
= 55°C
20
μA
I
GSSF
Gate - Body Leakage, Forward
V
GS
= 20 V, V
DS
= 0 V
100
nA
I
GSSR
ON CHARACTERISTICS
(Note 2)
Gate - Body Leakage, Reverse
V
GS
= -20 V, V
DS
= 0 V
-100
nA
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 μA
1
1.4
3
V
T
J
=125°C
0.7
1.1
2.2
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= 10 V, I
D
= 5 A
0.044
0.05
T
J
=125°C
0.066
0.1
V
GS
= 4.5 V, I
D
= 3.9 A
0.066
0.08
T
J
=125°C
0.099
0.16
I
D(on)
On-State Drain Current
V
GS
= 10 V, V
DS
= 10 V
V
GS
= 4.5 V, V
DS
= 10 V
V
DS
= 10 V, I
D
= 3.5 A
40
A
20
g
FS
DYNAMIC CHARACTERISTICS
Forward Transconductance
3
8
S
C
iss
C
oss
C
rss
SWITCHING CHARACTERISTICS
(Note 2)
Input Capacitance
V
= 15 V, V
GS
= 0 V,
f = 1.0 MHz
525
pF
Output Capacitance
315
pF
Reverse Transfer Capacitance
185
pF
t
D(ON)
t
r
t
D(OFF)
t
f
Q
g
Q
gs
Q
gd
Turn - On Delay Time
V
DD
= 15 V, I
D
= 1 A,
V
GS
= 10 V, R
GEN
= 6
12
30
ns
Turn - On Rise Time
10
25
ns
Turn - Off Delay Time
25
50
ns
Turn - Off Fall Time
10
50
ns
Total Gate Charge
V
= 15 V,
I
D
= 5 A, V
GS
= 10 V
17
35
nC
Gate-Source Charge
1.5
nC
Gate-Drain Charge
3.7
nC
NDS9936.SAM
1993 Fairchild Semiconductor Corporation
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