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參數(shù)資料
| 型號(hào)： | NDS9936 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | Dual N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 5 A, 30 V, 0.05 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SO-8 |
| 文件頁(yè)數(shù)： | 1/10頁(yè) |
| 文件大?。?/td> | 343K |
| 代理商： | NDS9936 |
February 1996
NDS9936
Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
________________________________________________________________________________
Absolute Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
Parameter
NDS9936
Units
V
DSS
Drain-Source Voltage
30
V
V
GSS
Gate-Source Voltage
± 20
V
I
D
Drain Current - Continuous @ T
A
= 25°C
(Note 1a)
± 5.0
A
- Continuous @ T
A
= 70°C
(Note 1a)
- Pulsed @ T
A
= 25°C
± 4.0
± 40
P
D
Power Dissipation for Dual Operation
2
W
Power Dissipation for Single Operation
(Note 1a)
1.6
(Note 1b)
1
(Note 1c)
0.9
T
J
,T
STG
THERMAL CHARACTERISTICS
Operating and Storage Temperature Range
-55 to 150
°C
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
78
°C/W
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1)
40
°C/W
NDS9936.SAM
5A, 30V. R
DS(ON)
= 0.05
@ V
GS
= 10V.
High density cell design for extremely low R
DS(ON)
.
High power and current handling capability in a widely used
surface mount package.
Dual MOSFET in surface mount package.
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance and provide
superior switching performance. These devices are particularly
suited for low voltage applications such as DC/DC conversion,
disk drive motor control, and other battery powered circuits
where fast switching, low in-line power loss, and resistance to
transients are needed.
1
5
6
7
8
4
3
2
1997 Fairchild Semiconductor Corporation
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| NDS9945 | Dual N-Channel Enhancement Mode Field Effect Transistor |
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| NDS9952A | Dual N & P-Channel Enhancement Mode Field Effect Transistor |
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參數(shù)描述 |
|---|---|
| NDS9943 | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDS9945 | 功能描述:MOSFET Dl N-Ch Enhancement RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDS9945 | 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR MOSFET 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR, MOSFET |
| NDS9945 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO |
| NDS9945_L86Z | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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