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參數(shù)資料
| 型號： | NDS9952A |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | Dual N & P-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 3.7 A, 30 V, 0.08 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SOIC-8 |
| 文件頁數(shù)： | 1/13頁 |
| 文件大小： | 366K |
| 代理商： | NDS9952A |
February 1996
NDS9952A
Dual N & P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
________________________________________________________________________________
Absolute Maximum Ratings
Symbol
Parameter
T
A
= 25°C unless otherwise noted
N-Channel
P-Channel
Units
V
DSS
Drain-Source Voltage
30
-30
V
V
GSS
Gate-Source Voltage
± 20
± 20
V
I
D
Drain Current - Continuous
(Note 1a)
± 3.7
± 2.9
A
- Pulsed
± 15
± 10
P
D
Power Dissipation for Dual Operation
2
W
Power Dissipation for Single Operation
(Note 1a)
1.6
(Note 1b)
1
(Note 1c)
0.9
T
J
,T
STG
Operating and Storage Temperature Range
-55 to 150
°C
THERMAL CHARACTERISTICS
R
θ
JA
R
θ
JC
Thermal Resistance, Junction-to-Ambient
(Note 1a)
78
°C/W
Thermal Resistance, Junction-to-Case
(Note 1)
40
°C/W
NDS9952A.SAM
These dual N- and P-channel enhancement mode power
field effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This
very high density process is especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulses in the
avalanche and commutation modes. These devices are
particularly suited for low voltage applications such as
notebook computer power management and other
battery powered circuits where fast switching, low in-line
power loss, and resistance to transients are needed.
N-Channel 3.7A, 30V, R
DS(ON)
=0.08
@ V
GS
=10V.
P-Channel -2.9A, -30V, R
DS(ON)
=0.13
@ V
GS
=-10V.
High density cell design or extremely low R
DS(ON)
.
High power and current handling capability in a widely used
surface mount package.
Dual (N & P-Channel) MOSFET in surface mount package.
1
5
6
7
8
4
3
2
1997 Fairchild Semiconductor Corporation
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| NDS9952A | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO 制造商:Fairchild Semiconductor Corporation 功能描述:DUAL N/P CHANNEL MOSFET, 30V, SOIC |
| NDS9952A_NL | 制造商:Freescale Semiconductor 功能描述: |
| NDS9952A_Q | 功能描述:MOSFET SO-8 N&P-CH ENHANCE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDS9952A-CUT TAPE | 制造商:FAIRCHILD 功能描述:NDS Series Dual N and P-Channel 30 V 0.08 Ohm Field Effect Transistor -SOIC-8 |
| NDS9953A | 功能描述:MOSFET SO-8 P-CH ENHANCE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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