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參數(shù)資料
| 型號： | NDS9955 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | Dual N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 3 A, 50 V, 0.13 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SO-8 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 196K |
| 代理商： | NDS9955 |
May 1998
NDS9955
Dual N-Channel Enhancement Mode Field Effect Transistor
General Description Features
Absolute Maximum Ratings
T
A
= 25
o
C unless other wise noted
Symbol
Parameter
NDS9955
Units
V
DSS
Drain-Source Voltage
50
V
V
GSS
I
D
Gate-Source Voltage
±20
V
Drain Current - Continuous
(Note 1a)
3
A
- Pulsed
10
P
D
Power Dissipation for Dual Operation
2
W
Power Dissipation for Single Operation
(Note 1a)
1.6
(Note 1b)
1
(Note 1c)
0.9
T
J
,T
STG
Operating and Storage Temperature Range
-55 to 150
°C
THERMAL CHARACTERISTICS
R
θ
JA
R
θ
JC
Thermal Resistance, Junction-to-Ambient
(Note 1a)
78
°C/W
Thermal Resistance, Junction-to-Case
(Note 1)
40
°C/W
NDS9955 Rev.A
3.0 A, 50 V. R
DS(ON)
= 0.130
@ V
GS
= 10 V,
R
DS(ON)
= 0.200
@ V
GS
= 4.5 V.
High density cell design for extremely low R
DS(ON)
.
High power and current handling capability in a widely
used surface mount package.
Dual MOSFET in surface mount package.
SOT-23
SuperSOT
TM
-8
SOIC-16
SO-8
SOT-223
SuperSOT
TM
-6
SO-8 N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high
cell density, DMOS technology. This very high density
process is especially tailored to provide superior switching
performance and minimize on-state resistance. These
devices are particularly suited for low voltage applications
such as disk drive motor control, battery powered circuits
where fast switching, low in-line power loss, and resistance
to transients are needed.
S1
D1
S2
G1
SO-8
D2
NDS
9955
D2
D1
G2
pin
1
1
5
7
8
2
3
4
6
1998 Fairchild Semiconductor Corporation
相關PDF資料 |
PDF描述 |
|---|---|
| NDS9956A | Dual N-Channel Enhancement Mode Field Effect Transistor（3.7A，30V，0.08Ω）(雙N溝道增強型場效應管（漏電流3.7A, 漏源電壓30V，導通電阻0.08Ω）) |
| NDS9956 | Dual N-Channel Enhancement Mode Field Effect Transistor |
| NDS9957 | Dual N-Channel Enhancement Mode Field Effect Transistor |
| NDS9958 | Dual N & P-Channel Enhancement Mode Field Effect Transistor |
| NDS9959 | Dual N-Channel Enhancement Mode Field Effect Transistor（2.0A，50V，0.3Ω）(雙N溝道增強型場效應管（漏電流2.0A, 漏源電壓50V，導通電阻0.3Ω）) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| NDS9955_L86Z | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDS9956 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N-Channel Enhancement Mode Field Effect Transistor |
| NDS9956A | 功能描述:MOSFET Dual N-Ch FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDS9956A | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL NN LOGIC SO-8 |
| NDS9956A_Q | 功能描述:MOSFET Dual N-Ch FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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