參數(shù)資料
型號: NDS9955
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: Dual N-Channel Enhancement Mode Field Effect Transistor
中文描述: 3 A, 50 V, 0.13 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝: SO-8
文件頁數(shù): 7/8頁
文件大?。?/td> 196K
代理商: NDS9955
SOIC-8 (FS PKG Code S1)
1 : 1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 0.0774
SO-8 Tape and Reel Data and Package Dimensions, continued
September 1998, Rev. A
9
相關(guān)PDF資料
PDF描述
NDS9956A Dual N-Channel Enhancement Mode Field Effect Transistor(3.7A,30V,0.08Ω)(雙N溝道增強(qiáng)型場效應(yīng)管(漏電流3.7A, 漏源電壓30V,導(dǎo)通電阻0.08Ω))
NDS9956 Dual N-Channel Enhancement Mode Field Effect Transistor
NDS9957 Dual N-Channel Enhancement Mode Field Effect Transistor
NDS9958 Dual N & P-Channel Enhancement Mode Field Effect Transistor
NDS9959 Dual N-Channel Enhancement Mode Field Effect Transistor(2.0A,50V,0.3Ω)(雙N溝道增強(qiáng)型場效應(yīng)管(漏電流2.0A, 漏源電壓50V,導(dǎo)通電阻0.3Ω))
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NDS9955_L86Z 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDS9956 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N-Channel Enhancement Mode Field Effect Transistor
NDS9956A 功能描述:MOSFET Dual N-Ch FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDS9956A 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL NN LOGIC SO-8
NDS9956A_Q 功能描述:MOSFET Dual N-Ch FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube