參數(shù)資料
型號： NDS9955
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： Dual N-Channel Enhancement Mode Field Effect Transistor
中文描述： 3 A, 50 V, 0.13 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝： SO-8
文件頁數(shù)： 2/8頁
文件大?。?/td> 196K
代理商： NDS9955
Electrical Characteristics
(
T
A
= 25
O
C unless otherwise noted )
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
BV
DSS
/
T
J
I
DSS
I
GSSF
I
GSSR
ON CHARACTERISTICS
(Note 2)
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 μA
I
D
= 250 μA, Referenced to 25
o
C
50
V
Breakdown Voltage Temp. Coefficient
60
mV/
o
C
Zero Gate Voltage Drain Current
V
DS
= 40 V, V
GS
= 0 V
V
GS
= 20 V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
2
μA
Gate - Body Leakage, Forward
100
nA
Gate - Body Leakage, Reverse
-100
nA
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 μA
1
1.7
3
V
T
J
=125°C
0.7
2.2
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= 10 V, I
D
= 3 A
0.076
0.13
T
J
=125°C
0.124
0.2
V
GS
= 4.5 V, I
D
= 1.5 A
0.103
0.2
T
J
=125°C
0.166
0.3
I
D(ON)
g
FS
DYNAMIC CH ARACTERISTICS
On-State Drain Current
V
GS
= 10 V, V
DS
= 10 V
V
DS
= 10 V, I
D
= 3 A
10
A
Forward Transconductance
5.3
S
C
iss
C
oss
C
rss
SWITCHING CHARACTERISTICS
(Note 2)
Input Capacitance
V
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
345
pF
Output Capacitance
110
pF
Reverse Transfer Capacitance
25
pF
t
D(on)
t
r
Turn - On Delay Time
V
DS
= 25 V, I
D
= 1 A
V
GS
= 10 V , R
GEN
= 6
5
20
ns
Turn - On Rise Time
7.5
20
t
D(off)
t
f
Q
g
Q
gs
Q
gd
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Turn - Off Delay Time
20
70
Turn - Off Fall Time
7
5
Total Gate Charge
V
DS
= 25 V, I
D
= 2 A,
V
GS
= 10 V
12.9
30
nC
Gate-Source Charge
1.7
Gate-Drain Charge
3.2
I
S
V
SD
t
rr
I
rr
Maximum Continuous Drain-Source Diode Forward Current
1.3
A
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 1.3 A
(Note 2)
V
GS
= 0 V, I
= 1.3 A,
dI
F
/dt = 100 A/μs
0.8
1.2
V
Reverse Recovery Time
40
ns
Reverse Recovery Current
1.5
A
Notes:
1. R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
θ
JC
is guaranteed by
design while R
θ
CA
is determined by the user's board design.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%.
NDS9955 Rev.A
c. 135
pad of 2oz copper.
O
C/W on a 0.003 in
2
b. 125
pad of 2oz copper.
O
C/W on a 0.02 in
2
a. 78
O
C/W on a 0.5 in
pad of 2oz copper.
2
相關(guān)PDF資料
PDF描述
NDS9956A Dual N-Channel Enhancement Mode Field Effect Transistor（3.7A，30V，0.08Ω）(雙N溝道增強型場效應(yīng)管（漏電流3.7A, 漏源電壓30V，導(dǎo)通電阻0.08Ω）)
NDS9956 Dual N-Channel Enhancement Mode Field Effect Transistor
NDS9957 Dual N-Channel Enhancement Mode Field Effect Transistor
NDS9958 Dual N & P-Channel Enhancement Mode Field Effect Transistor
NDS9959 Dual N-Channel Enhancement Mode Field Effect Transistor（2.0A，50V，0.3Ω）(雙N溝道增強型場效應(yīng)管（漏電流2.0A, 漏源電壓50V，導(dǎo)通電阻0.3Ω）)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NDS9955_L86Z 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDS9956 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N-Channel Enhancement Mode Field Effect Transistor
NDS9956A 功能描述:MOSFET Dual N-Ch FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDS9956A 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL NN LOGIC SO-8
NDS9956A_Q 功能描述:MOSFET Dual N-Ch FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*