參數(shù)資料
型號(hào)： NDS356
廠商： Fairchild Semiconductor Corporation
英文描述： P-Channel Logic Level Enhancement Mode Field Effect Transistor
中文描述： P溝道增強(qiáng)模式的邏輯電平場效應(yīng)晶體管
文件頁數(shù)： 2/6頁
文件大?。?/td> 78K
代理商： NDS356
Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
I
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= -250 μA
V
DS
= -24 V, V
GS
= 0 V
-30
V
Zero Gate Voltage Drain Current
-1
μA
T
J
=55°C
-10
μA
I
GSSF
I
GSSR
Gate - Body Leakage, Forward
V
GS
= 20 V, V
DS
= 0 V
V
GS
= -20V, V
DS
= 0 V
100
nA
Gate - Body Leakage, Reverse
-100
nA
ON CHARACTERISTICS
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= -250 μA
-0.8
-1.6
-2.5
V
T
J
=125°C
-0.5
-1.3
-2.2
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= -4.5 V, I
D
= -1.1 A
0.25
0.3
T
J
=125°C
0.35
0.4
V
GS
= -10 V, I
D
= -1.3 A
0.14
0.2
I
D(ON)
g
FS
DYNAMIC CHARACTERISTICS
On-State Drain Current
V
GS
= -4.5 V, V
DS
= -5 V
V
DS
= -5 V, I
D
= -1.1 A
-3
A
Forward Transconductance
2
S
C
iss
Input Capacitance
V
= -10 V, V
GS
= 0 V,
f = 1.0 MHz
280
pF
C
oss
Output Capacitance
170
pF
C
rss
Reverse Transfer Capacitance
65
pF
SWITCHING CHARACTERISTICS
(Note 2)
t
D(on)
t
r
t
D(off)
t
f
Q
g
Q
gs
Turn - On Delay Time
V
DD
= -10 V, I
D
= -1 A,
V
GS
= -10 V, R
GEN
= 50
8
15
ns
Turn - On Rise Time
17
30
ns
Turn - Off Delay Time
53
90
ns
Turn - Off Fall Time
38
80
ns
Total Gate Charge
V
DS
= -10 V, I
D
= -1.1 A,
V
GS
= -5 V
3.4
4.4
nC
Gate-Source Charge
0.7
nC
Q
gd
Gate-Drain Charge
1.5
nC
NDS356AP Rev.C
1
相關(guān)PDF資料
PDF描述
NDS356P P-Channel Logic Level Enhancement Mode Field Effect Transistor（-1.1A，-20V，0.3Ω）(P溝道邏輯增強(qiáng)型MOS場效應(yīng)管（漏電流-1.1A, 漏源電壓-20V，導(dǎo)通電阻0.3Ω）)
NDS7002 N-Channel Enhancement Mode Field Effect Transistor
NDS7002A N-Channel Enhancement Mode Field Effect Transistor(N溝道增強(qiáng)型場效應(yīng)管)
NDS8410A Single N-Channel Enhancement Mode Field Effect Transistor
NDS8410S Single N-Channel Enhancement Mode Field Effect Transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NDS356AP 功能描述:MOSFET P-Channel Logic RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDS356AP 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SOT-23
NDS356AP_L99Z 功能描述:MOSFET P-Ch LL FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDS356AP_NB8L005A 制造商:Fairchild Semiconductor Corporation 功能描述:TRANS MOSFET P-CH 30V 1.1A 3PIN SUPERSOT - Tape and Reel
NDS356AP-CUT TAPE 制造商:FAIRCHILD 功能描述:NDS Series P-Channel 30 V 0.3 Ohm Enhance Mode Field Effect Transistor - SSOT-3
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