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參數(shù)資料
| 型號： | NDS7002 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | N溝道增強型場效應管 |
| 文件頁數(shù)： | 1/14頁 |
| 文件大小： | 538K |
| 代理商： | NDS7002 |
November 1995
2N7000 / 2N7002 / NDS7002A
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
___________________________________________________________________________________________
Absolute Maximum Ratings
Symbol
Parameter
T
A
= 25°C unless otherwise noted
2N7000
2N7002
NDS7002A
Units
V
DSS
V
DGR
Drain-Source Voltage
60
V
Drain-Gate Voltage (R
GS
< 1 M
)
Gate-Source Voltage - Continuous
60
V
V
GSS
±
20
±
40
115
V
- Non Repetitive (tp < 50μs)
I
D
Maximum Drain Current - Continuous
200
280
mA
- Pulsed
500
400
800
200
1500
300
P
D
Maximum Power Dissipation
mW
Derated above 25
o
C
3.2
1.6
2.4
mW/°C
T
J
,T
STG
T
L
Operating and Storage Temperature Range
-55 to 150
-65 to 150
°C
Maximum Lead Temperature for Soldering
Purposes, 1/16" from Case for 10 Seconds
300
°C
THERMAL CHARACTERISTICS
R
θ
JA
Thermal Resistance, Junction-to-Ambient
312.5
625
417
°C/W
2N7000.SAM Rev. A1
These N-Channel enhancement mode field effect transistors
are produced using Fairchild's proprietary, high cell density,
DMOS technology. These products have been designed to
minimize on-state resistance while provide rugged, reliable,
and fast switching performance. They can be used in most
applications requiring up to 400mA DC and can deliver
pulsed currents up to 2A. These products are particularly
suited for low voltage, low current applications such as small
servo motor control, power MOSFET gate drivers, and other
switching applications.
High density cell design for low R
DS(ON)
.
Voltage controlled small signal switch.
Rugged and reliable.
High saturation current capability.
S
D
G
S
G
D
TO-92
1997 Fairchild Semiconductor Corporation
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PDF描述 |
|---|---|
| NDS7002A | N-Channel Enhancement Mode Field Effect Transistor(N溝道增強型場效應管) |
| NDS8410A | Single N-Channel Enhancement Mode Field Effect Transistor |
| NDS8410S | Single N-Channel Enhancement Mode Field Effect Transistor |
| NDS8410 | Single N-Channel Enhancement Mode Field Effect Transistor（10A，30V，0.015Ω）(單N溝道增強型MOS場效應管（漏電流10A, 漏源電壓30V，導通電阻0.015Ω）) |
| NDS8425 | Single N-Channel Enhancement Mode Field Effect Transistor |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| NDS7002A | 功能描述:MOSFET SOT-23 N-CH ENHANCE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDS7002A | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SOT-23 |
| NDS7002A_D87Z | 功能描述:MOSFET N-Channel FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDS7002A_NB9GGTXA | 功能描述:MOSFET SOT-23 N-CH ENHANCE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDS7002A_Q | 功能描述:MOSFET SOT-23 N-CH ENHANCE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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