- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄363244 > NDS7002 (Fairchild Semiconductor Corporation) N-Channel Enhancement Mode Field Effect Transistor PDF資料下載
參數(shù)資料
| 型號： | NDS7002 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | N溝道增強型場效應管 |
| 文件頁數(shù)： | 2/14頁 |
| 文件大小： | 538K |
| 代理商： | NDS7002 |
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Conditions
Typ
e
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
I
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 10 μA
V
DS
= 48 V, V
GS
= 0 V
All
60
V
Zero Gate Voltage Drain Current
2N7000
1
μA
T
J
=125°C
1
mA
V
DS
= 60 V, V
GS
= 0 V
2N7002
NDS7002A
1
μA
T
J
=125°C
0.5
mA
I
GSSF
Gate - Body Leakage, Forward
V
GS
= 15 V, V
DS
= 0 V
V
GS
= 20 V, V
DS
= 0 V
2N7000
10
nA
2N7002
NDS7002A
100
nA
I
GSSR
Gate - Body Leakage, Reverse
V
GS
= -15 V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
2N7000
-10
nA
2N7002
NDS7002A
-100
nA
ON CHARACTERISTICS
(Note 1)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 250 μA
2N7000
0.8
2.1
3
V
2N7002
NDS7002A
1
2.1
2.5
R
DS(ON)
Static Drain-Source On-Resistance V
GS
= 10 V, I
D
= 500 mA
2N7000
1.2
5
T
J
=125°C
1.9
9
V
GS
= 4.5 V, I
D
= 75 mA
V
GS
= 10 V, I
D
= 500 mA
1.8
5.3
2N7002
1.2
7.5
T
J
=100°C
1.7
13.5
V
GS
= 5.0 V, I
D
= 50 mA
1.7
7.5
T
J
=100C
2.4
13.5
V
GS
= 10 V, I
D
= 500 mA
NDS7002
A
1.2
2
T
J
=125°C
2
3.5
V
GS
= 5.0 V, I
D
= 50 mA
1.7
3
T
J
=125°C
2.8
5
V
DS(ON)
Drain-Source On-Voltage
V
GS
= 10 V, I
D
= 500 mA
V
GS
= 4.5 V, I
D
= 75 mA
V
GS
= 10 V, I
D
= 500mA
V
GS
= 5.0 V, I
D
= 50 mA
V
GS
= 10 V, I
D
= 500mA
V
GS
= 5.0 V, I
D
= 50 mA
2N7000
0.6
2.5
V
0.14
0.4
2N7002
0.6
3.75
0.09
1.5
NDS7002A
0.6
1
0.09
0.15
2N7000.SAM Rev. A1
相關PDF資料 |
PDF描述 |
|---|---|
| NDS7002A | N-Channel Enhancement Mode Field Effect Transistor(N溝道增強型場效應管) |
| NDS8410A | Single N-Channel Enhancement Mode Field Effect Transistor |
| NDS8410S | Single N-Channel Enhancement Mode Field Effect Transistor |
| NDS8410 | Single N-Channel Enhancement Mode Field Effect Transistor（10A，30V，0.015Ω）(單N溝道增強型MOS場效應管（漏電流10A, 漏源電壓30V，導通電阻0.015Ω）) |
| NDS8425 | Single N-Channel Enhancement Mode Field Effect Transistor |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| NDS7002A | 功能描述:MOSFET SOT-23 N-CH ENHANCE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDS7002A | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SOT-23 |
| NDS7002A_D87Z | 功能描述:MOSFET N-Channel FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDS7002A_NB9GGTXA | 功能描述:MOSFET SOT-23 N-CH ENHANCE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDS7002A_Q | 功能描述:MOSFET SOT-23 N-CH ENHANCE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復。