參數(shù)資料
型號(hào)： NDS7002
廠商： Fairchild Semiconductor Corporation
英文描述： N-Channel Enhancement Mode Field Effect Transistor
中文描述： N溝道增強(qiáng)型場(chǎng)效應(yīng)管
文件頁(yè)數(shù)： 3/14頁(yè)
文件大?。?/td> 538K
代理商： NDS7002
Electrical Characteristics
T
A
= 25
o
C unless otherwise noted
Symbol
Parameter
Conditions
Typ
e
Min
Typ
Max
Units
ON CHARACTERISTICS
Continued
(Note 1)
I
D(ON)
On-State Drain Current
V
GS
= 4.5 V, V
DS
= 10 V
V
GS
= 10 V, V
DS
> 2 V
DS(on)
V
GS
= 10 V, V
DS
> 2 V
DS(on)
V
DS
= 10 V, I
D
= 200 mA
V
DS
> 2 V
DS(on)
, I
D
= 200 mA
V
DS
> 2 V
DS(on)
, I
D
= 200 mA
2N7000
75
600
mA
2N7002
500
2700
NDS7002A
500
2700
g
FS
Forward Transconductance
2N7000
100
320
mS
2N7002
80
320
NDS7002A
80
320
DYNAMIC CHARACTERISTICS
C
iss
C
oss
C
rss
t
on
Input Capacitance
V
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
All
20
50
pF
Output Capacitance
All
11
25
pF
Reverse Transfer Capacitance
All
4
5
pF
Turn-On Time
V
= 15 V, R
L
= 25
,
I
D
= 500 mA, V
GS
= 10 V,
R
GEN
= 25
V
= 30 V, R
L
= 150
,
I
D
= 200 mA, V
GS
= 10 V,
R
GEN
= 25
V
= 15 V, R
L
= 25
,
I
D
= 500 mA, V
GS
= 10 V,
R
GEN
= 25
V
= 30 V, R
L
= 150
,
I
D
= 200 mA, V
GS
= 10 V,
R
GEN
= 25
2N7000
10
ns
2N700
NDS7002A
20
t
off
Turn-Off Time
2N7000
10
ns
2N700
NDS7002
A
20
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
Maximum Continuous Drain-Source Diode Forward Current
2N7002
115
mA
NDS7002A
280
I
SM
Maximum Pulsed Drain-Source Diode Forward Current
2N7002
0.8
A
NDS7002A
1.5
1.5
V
SD
Drain-Source Diode Forward
Voltage
V
GS
= 0 V, I
S
= 115 mA
(Note 1)
V
GS
= 0 V, I
S
= 400 mA
(Note 1)
2N7002
0.88
V
NDS7002
A
0.88
1.2
Note:
1. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%.
2N7000.SAM Rev. A1
相關(guān)PDF資料
PDF描述
NDS7002A N-Channel Enhancement Mode Field Effect Transistor(N溝道增強(qiáng)型場(chǎng)效應(yīng)管)
NDS8410A Single N-Channel Enhancement Mode Field Effect Transistor
NDS8410S Single N-Channel Enhancement Mode Field Effect Transistor
NDS8410 Single N-Channel Enhancement Mode Field Effect Transistor（10A，30V，0.015Ω）(單N溝道增強(qiáng)型MOS場(chǎng)效應(yīng)管（漏電流10A, 漏源電壓30V，導(dǎo)通電阻0.015Ω）)
NDS8425 Single N-Channel Enhancement Mode Field Effect Transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NDS7002A 功能描述:MOSFET SOT-23 N-CH ENHANCE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDS7002A 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SOT-23
NDS7002A_D87Z 功能描述:MOSFET N-Channel FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDS7002A_NB9GGTXA 功能描述:MOSFET SOT-23 N-CH ENHANCE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDS7002A_Q 功能描述:MOSFET SOT-23 N-CH ENHANCE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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