參數(shù)資料
型號(hào)： NDP6020
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： N-Channel Logic Level Enhancement Mode Field Effect Transistor
中文描述： 35 A, 20 V, 0.023 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： TO-220, 3 PIN
文件頁(yè)數(shù)： 4/12頁(yè)
文件大?。?/td> 376K
代理商： NDP6020
NDP6020 Rev.C
-50
-25
0
25
50
75
100
125
150
175
0.6
0.8
1
1.2
1.4
1.6
1.8
T , JUNCTION TEMPERATURE (°C)
D
R
D
V = 4.5V
I = 18A
-50
-25
0
25
50
75
100
125
150
175
0.2
0.4
0.6
0.8
1
1.2
1.4
T , JUNCTION TEMPERATURE (°C)
G
V
t
I = 250μA
V = V
GS
0
10
20
I , DRAIN CURRENT (A)
30
40
50
60
0.8
1
1.2
1.4
1.6
1.8
D
4.0
R
D
2.5
3.5
V = 2.0V
2.7
3.0
5.0
4.5
0
10
20
I , DRAIN CURRENT (A)
30
40
50
60
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
D
V = 4.5 V
J
25°C
-55°C
R
D
0.5
1
1.5
2
0
5
10
15
20
V , GATE TO SOURCE VOLTAGE (V)
I
D
125°C
25°C
V = 5V
TJ
Typical Electrical Characteristics
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Gate
Voltage and Drain Current.
Figure 3. On-Resistance Variation
with Temperature
.
Figure 4. On-Resistance Variation with Drain
Current and Temperature
.
Figure 5. Transfer Characteristics
.
Figure 6. Gate Threshold Variation with
Temperature
.
0
1
2
3
4
5
0
10
20
30
40
50
60
V , DRAIN-SOURCE VOLTAGE (V)
I
D
V = 4.5V
2.0
2.7
1.5
2.5
3.0
3.5
相關(guān)PDF資料
PDF描述
NDB6030L N-Channel Logic Level Enhancement Mode Field Effect Transistor（52A,30V，0.00135Ω）(N溝道邏輯電平增強(qiáng)型MOS場(chǎng)效應(yīng)管（漏電流52A, 漏源電壓30V，導(dǎo)通電阻0.0135Ω）)
NDB6030PL P-Channel Logic Level Enhancement Mode Field Effect Transistor（-30A,-30V，0.042Ω）(P溝道邏輯增強(qiáng)型MOS場(chǎng)效應(yīng)管（漏電流-30A, 漏源電壓-30V，導(dǎo)通電阻0.042Ω）)
NDB6050L N-Channel Logic Level Enhancement Mode Field Effect Transistor
NDP6050L N-Channel Logic Level Enhancement Mode Field Effect Transistor（48A,50V，0.025Ω）(N溝道邏輯增強(qiáng)型MOS場(chǎng)效應(yīng)管（漏電流48A, 漏源電壓50V，導(dǎo)通電阻0.025Ω）)
NDB6050 N-Channel Enhancement Mode Field Effect Transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NDP6020P 功能描述:MOSFET P-Ch LL FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDP6020P 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P TO-220
NDP6020P_Q 功能描述:MOSFET P-Ch LL FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDP6030 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDP6030L 功能描述:MOSFET N-Channel FET LL Enhancement RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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